Localized surface plasmon resonance-enhanced solar-blind Al_0.4Ga_0.6N MSM photodetectors exhibiting high-temperature robustness

Abstract

The appealing properties of tunable direct wide bandgap, high-temperature robustness and chemical hardness, make AlxGa1-xN a promising candidate for fabricating robust solar-blind photodetectors (PDs). In this work, we have utilized the optical phenomenon of localized surface plasmon resonance (LSPR) in metal nanoparticles (NPs) to significantly enhance the performance of solar-blind Al0.4Ga0.6N metal-semiconductor-metal (MSM) PDs that exhibit high-temperature robustness. We demonstrate that the presence of palladium (Pd) NPs leads to a remarkable enhancement by nearly 600, 300, and 462%, respectively, in the photo-to-dark current ratio (PDCR), responsivity, and specific detectivity of the Al0.4Ga0.6N PD at the wavelength of 280 nm. Using the optical power density of only 32 μWcm−2 at −10 V, maximum values of ~3×103,2.7 AW−1, and 2.4×1013Jones are found for the PDCR, responsivity and specific detectivity, respectively. The experimental observations are supported by finite difference time domain (FDTD) simulations, which clearly indicate the presence of LSPR in Pd NPs decorated on the surface of Al0.4Ga0.6N. The mechanism behind the enhancement is investigated in detail, and is ascribed to the LSPR induced effects, namely, improved optical absorption, enhanced local electric field and LSPR sensitization effect. Moreover, the PD exhibits a stable operation up to 400 K, thereby exhibiting the high-temperature robustness desirable for commercial applications.

Progress on photovoltaic AlGaN photodiodes for solar-blind ultraviolet photodetection

“…Kaushik et al reported a type of LSPR-enhanced Al 0.4 Ga 0.6 N MSM SBPD with strong HT robustness, as shown in Fig. 12 [155] . In the study, they utilized the LSPR effect in palladium (Pd) NPs to prominently improve the photosensitivity of Al 0.4 Ga 0.6 N MSM SBPDs, and the device also exhibited strong thermal robustness.…”

“…PEC-UVPDs exhibit much higher responsivity and lower fabrication cost in comparison to the reported p-n or Schottky SBPDs. The current output signals of most p-n or Schottky UVPDs range in nano-ampere (nA) order, while those of [155] . Copyright 2022, Institute of Physics.…”

“…(f) The plot of responsivity with voltage at 500, 280, and 220 nm for Pd-decorated Al 0.4 Ga 0.6 N MSM SBPD. Reproduced with permission[155] . Copyright 2022, Institute of Physics.…”

Deep-Ultraviolet Photodetectors Based on Hexagonal Boron Nitride Nanosheets Enhanced by Localized Surface Plasmon Resonance in Al Nanoparticles

“…LSPR leads to enhanced optical absorption, which, in turn, creates a larger number of charge carriers contributing to the photocurrent. In addition, an immediate effect of LSPR is an enhanced local electric field, which boosts the separation of generated electrons and holes, thereby enhancing the photocurrent. − Suo et al utilized the phenomenon of LSPR in Au and Ag NPs to improve the responsivity of graphene PDs by 2.8 times in the visible range . Selamneni et al reported the fabrication of flexible visible/near-IR PDs by functionalizing MoS 2 with Au, Pt, and Pd NPs.…”

Enhanced photodetection and a wider spectral range in the In2S3–ZnO 2D–3D heterojunction: combined optical absorption and enhanced carrier separation at the type-II heterojunction

“…[2][3][4] Among them, broadband photodetectors, operating especially in the UV-vis range, are important components of electrooptic systems, optical transmission, environmental observance, and so on. Until now, many highly efficient photodetectors with inconsistent device alignments formed of wide bandgap semiconductors, such as ZnO, 5 SiC, 6 TiO 2 , 7 and Pd-GaN, 8 have been studied for photodetection in the solar-blind (UV) detection range. 9 Among them, ZnO is one of the most studied materials owing to its captivating properties, such as wide bandgap (3.1-3.3 eV), high electron mobility, 10 superior UV absorption, high exciton binding energy, and fast switching time.…”