Localized surface plasmon resonance frequency tuning in highly doped InAsSb/GaSb one-dimensional nanostructures

Mj, Milla; Barho, Franziska; Гонзалез-Посада, Ф.; Cerutti, L.; Bomers, M.; Rodriguez, J. B.; Tournié, E.; Taliercio, Thierry

doi:10.1088/0957-4484/27/42/425201

Cited by 26 publications

(19 citation statements)

References 41 publications

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“…After thermal de-oxidation, a 300 nm thick non-intentionally doped GaSb buffer was grown, followed by 100 nm thick Si-doped InAs 0.9 Sb 0.1 . A doping level of 5x10 19 cm -3 corresponding to a plasma wavelength of 5.5 µm was determined for the InAs 0.9 Sb 0.1 layer [27].The gratings were fabricated by UV-lithography and selective etching with C 6 H 8 O 7 : H 2 O 2 as described in a previous work [28].…”

Section: Sample Fabrication and Experimental Setupmentioning

confidence: 99%

Pedestal formation of all-semiconductor gratings through GaSb oxidation for mid-IR plasmonics

Bomers

Barho

Milla-Rodrigo³

et al. 2018

J. Phys. D: Appl. Phys.

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Mid-IR localized surface plasmon resonances (LSPR) have been demonstrated in nano-ribbons of highly Si-doped InAsSb alloys on GaSb substrates. We show that the slow, steady and selective oxidation of GaSb in water leads to an all-semiconductor mid-IR pedestal configuration consisting of highly doped InAsSb plasmonic resonators on top of GaSb pedestals embedded in an amorphous oxide layer. The homogeneity of the pedestal structure is imaged with an attenuated-total reflection Fourier transform infrared (ATR-FTIR) microscope by measuring around the plasmonic excitation at the plasma wavelength of 5.5 µm. As the plasmonic properties are influenced by modifications of the surrounding medium, we show for all-semiconductor gratings with defined doping level and defined grating geometry, that the GaSb oxidation process allows post-fabrication targeting of mid-IR plasmonic resonances to cover the mid-IR range from 5 to 20 µm. Additionally the pedestal formation reduces the refractive index mismatch between the two interfaces of the plasmonic resonators which allows to exploit a second plasmonic peak and which favors plasmonic field enhancement at the top (air-) side of the structure relevant for enhanced molecular vibration spectroscopy.

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Section: Sample Fabrication and Experimental Setupmentioning

confidence: 99%

Pedestal formation of all-semiconductor gratings through GaSb oxidation for mid-IR plasmonics

Bomers

Barho

Milla-Rodrigo³

et al. 2018

J. Phys. D: Appl. Phys.

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“…Briefly, InAs:Si and InAsSb:Si display metallic behavior at wavelengths above 5 µm (2000 cm −1 ) approximately, making them adapted materials for mid‐IR applications. Besides the tunability by the geometric design of the metamaterial, the actual doping level of the HDSC constitutes an additional degree of freedom to tailor the optical response throughout the mid‐IR, which is an advantage over the metals traditionally used for metamaterials and plasmonics . In contrast to other semiconductor‐based metamaterials for mid‐IR absorber applications such as transparent conducting oxides (TCOs), the III–V semiconductors are low loss materials providing sharp resonances in the mid‐IR.…”

Section: Introductionmentioning

confidence: 99%

Heavily Doped Semiconductor Metamaterials for Mid‐Infrared Multispectral Perfect Absorption and Thermal Emission

Barho

Гонзалез-Посада

Cerutti

et al. 2020

Advanced Optical Materials

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A metamaterial perfect absorber based on layered, doped and undoped semiconductors is experimentally and theoretically investigated. Design rules are given to control the multispectral, narrow, strong absorption features (>98% absorption) in the mid‐IR spectrum. The proposed sub‐wavelength grating structures support localized surface plasmons and photonic resonances associated to the quarter wavelength optical thickness of the undoped spacer layer. The resonances hybridize depending on the geometric setup of the metamaterial and the material properties of the heavily doped semiconductor. The angular response of the resonances is studied to determine the acceptance angle. While the absorption is best at near‐normal incidence, the spectral position of the absorption bands is weakly dependent on the angular incidence up to angles of 45°. Complementary to the polarization‐dependent grating design of the metamaterial, an alternative based on a crossed grating nanopattern is also investigated for polarization insensitivity. Furthermore, it is demonstrated that the metamaterial perfect absorber provides a tailored thermal emission spectrum. Based on the heavily doped InAsSb/GaSb metamaterial platform, integrable and miniaturized perfect absorbers and thermal sources can be built.

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“…Finally, an optimized readout for intensity-based surface plasmon resonance (SPR) sensing is proposed, exploiting the polarization selective resonances. [35]. Photoresist is then removed with acetone, and the samples are cleaned with isopropanol and dried under N 2 flow.…”

Section: Introductionmentioning

confidence: 99%

Highly doped semiconductor plasmonic nanoantenna arrays for polarization selective broadband surface-enhanced infrared absorption spectroscopy of vanillin

et al. 2017

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Tailored plasmonic nanoantennas are needed for diverse applications, among those sensing. Surfaceenhanced infrared absorption (SEIRA) spectroscopy using adapted nanoantenna substrates is an efficient technique for the selective detection of molecules by their vibrational spectra, even in small quantity. Highly doped semiconductors have been proposed as innovative materials for plasmonics, especially for more flexibility concerning the targeted spectral range. Here, we report on rectangularshaped, highly Si-doped InAsSb nanoantennas sustaining polarization switchable longitudinal and transverse plasmonic resonances in the mid-infrared. For small array periodicities, the highest reflectance intensity is obtained. Large periodicities can be used to combine localized surface plasmon resonances (SPR) with array resonances, as shown in electromagnetic calculations. The nanoantenna arrays can be efficiently used for broadband SEIRA spectroscopy, exploiting the spectral overlap between the large longitudinal or transverse plasmonic resonances and narrow infrared active absorption features of an analyte molecule. We demonstrate an increase of the vibrational line intensity up to a factor of 5.7 of infrared-active absorption features of vanillin in the fingerprint spectral region, yielding enhancement factors of three to four orders of magnitude. Moreover, an optimized readout for SPR sensing is proposed based on slightly overlapping longitudinal and transverse localized SPR.

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Localized surface plasmon resonance frequency tuning in highly doped InAsSb/GaSb one-dimensional nanostructures

Cited by 26 publications

References 41 publications

Pedestal formation of all-semiconductor gratings through GaSb oxidation for mid-IR plasmonics

Pedestal formation of all-semiconductor gratings through GaSb oxidation for mid-IR plasmonics

Heavily Doped Semiconductor Metamaterials for Mid‐Infrared Multispectral Perfect Absorption and Thermal Emission

Highly doped semiconductor plasmonic nanoantenna arrays for polarization selective broadband surface-enhanced infrared absorption spectroscopy of vanillin

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