Locally Erasable Couplers for Optical Device Testing in Silicon on Insulator

Topley, R.; Martinez-Jimenez, G.; О’Faolain, L.; Healy, Noel; Mailis, S.; Thomson, David J.; Gardes, Frederic Y.; Peacock, Anna C.; Payne, D.N.; Mashanovich, Goran Z.; Reed, Graham T.

doi:10.1109/jlt.2014.2324018

Cited by 27 publications

(17 citation statements)

References 21 publications

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“…An ion energy and fluence of 130 KeV and 1×10 15 ions/cm 2 were used, respectively. According to our previously results [1], [2], this will provide 80% lattice disorder in silicon with a refractive index change of 0.5. The refractive index profile was measured using ellipsometry on a bulk implanted substrate, at 6 different angles of incidence as described in detail in Ref.…”

Section: Design and Fabricationmentioning

confidence: 61%

Ion Implantation in Silicon for Trimming the Operating Wavelength of Ring Resonators

Milošević¹,

Chen²,

Cao³

et al. 2018

IEEE J. Select. Topics Quantum Electron.

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In recent years, we have presented results on the development of erasable gratings in silicon to facilitate wafer scale testing of photonics circuits via ion implantation of germanium. Similar technology can be employed to control the operating wavelength of ring resonators, which is very sensitive to fabrication imperfections. Ion implantation into silicon causes radiation damage resulting in a refractive index increase, and can therefore form the basis of multiple optical devices. In this paper we discuss design, modelling and fabrication of ring resonators and their subsequent trimming using ion implantation of germanium into silicon, followed by either rapid thermal annealing or localized laser annealing. The results confirm the ability permanently tune the position of the resonant wavelength to any point inside the free spectral range of the ring resonator, thus greatly reducing the amount of power required for active tuning of these devices.

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Section: Design and Fabricationmentioning

confidence: 61%

Ion Implantation in Silicon for Trimming the Operating Wavelength of Ring Resonators

Milošević¹,

Chen²,

Cao³

et al. 2018

IEEE J. Select. Topics Quantum Electron.

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“…After fabrication of gratings and devices, a 20 nm Then an e-beam resist layer was deposited as mask layer for the Ge implantation. According to our previous results [6], over 80% lattice disorder in silicon would give a refractive index change of 0.5. Ge implantation was performed with energy of 130KeV and a dose of 1×10 15 ions/cm 2 .…”

Section: Device Design and Laser Annealingmentioning

confidence: 59%

Real-Time Phase Trimming of Mach-Zehnder Interferometers by Femtosecond Laser Annealing of Germanium Implanted Waveguides

Chen

et al. 2018

2018 IEEE 15th International Conference on Group IV Photonics (GFP)

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“…Surface GCs are a fundamental waveguide device for bridging huge mode mismatch between those in a PIC and a single-mode fiber (SMF) [72]. GCs can be designed at any position of a chip and may even be erasable [73] using postfabrication trimming technology [74,75]. With a large alignment tolerance, they provide a robust solution in optical interconnection [76,77].…”

Section: Subwavelength-structured Surface Grating Couplersmentioning

confidence: 99%

Subwavelength Engineering in Silicon Photonic Devices

Zhou

Cheng

Chen

et al. 2019

IEEE J. Select. Topics Quantum Electron.

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In the past decade there has been tremendous progress in using subwavelength-scale nanostructures with elaborately designed periodic and disordered photonic materials for applications in integrated photonics. In this paper, we review the advances in subwavelength engineering used in silicon photonic devices, with an emphasis on our own contributions on the use of subwavelength gratings and hyperuniform disordered photonic structures to attain state-of-the-art performances for near-and mid-infrared applications in fiber-chip coupling, slot waveguides for refractive-index sensing, mode conversion, wavelength filtering, integrated resonators, and ultracompact high-extinction and broadband integrated polarizers.

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Locally Erasable Couplers for Optical Device Testing in Silicon on Insulator

Cited by 27 publications

References 21 publications

Ion Implantation in Silicon for Trimming the Operating Wavelength of Ring Resonators

Ion Implantation in Silicon for Trimming the Operating Wavelength of Ring Resonators

Real-Time Phase Trimming of Mach-Zehnder Interferometers by Femtosecond Laser Annealing of Germanium Implanted Waveguides

Subwavelength Engineering in Silicon Photonic Devices

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