2024
DOI: 10.1021/acs.cgd.4c00559
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Log-Normal Glide and the Formation of Misfit Dislocation Networks in Heteroepitaxial ZnS on GaP

Alexandra Fonseca Montenegro,
Marzieh Baan,
Maryam Ghazisaeidi
et al.

Abstract: Scanning electron microscopy (SEM)-based electron channeling contrast imaging (ECCI) is used to observe and quantify misfit dislocation (MD) networks formed at the heteroepitaxial interface between ZnS and GaP grown by molecular beam epitaxy (MBE). Below a critical thickness of 15−20 nm, no MDs are observed. However, crystallographic features with strong dipole contrast, consistent with unexpanded dislocation half-loops, are observed prior to the formation of visible interfacial MD segments and any notable str… Show more

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