Logic and memory patterning breakthrough using High-NA lithography

Abstract

In this paper we will present initial results for logic and memory features imaged with the TWINSCAN EXE:5000 at the ASML-imec high NA lab after successful etch pattern transfer.For logic applications random logic metal designs (consisting of tight pitches and aggressive tip-to-tips) and corresponding via structures have been characterized for A14 and A10 nodes. As well, bidirectional designs enabled by high NA will be described. For memory applications, results from BLP/SNLP layer for D1d and D0a nodes will be presented.