Logic design with unipolar memristors

Amrani, Elad; Drori, Avishay; Kvatinsky, Shahar

doi:10.1109/vlsi-soc.2016.7753564

Cited by 8 publications

(9 citation statements)

References 14 publications

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“…With such highly uniform unipolar switching in Ta TE RRAM cells with cone-shaped CFs, we have further explored their logic-in-memory application. The logic functions realized using unipolar RRAM to date are very limited in number, and each of them requires a unique circuit configuration, which is possibly because of the fact that only a single type of the input logic signal was used. − To overcome this problem, we herein propose a novel “one switch + one unipolar RRAM cell” hybrid structure, as schematically shown in Figure a. In this case, both the switch’s physical state ( S ) and the external voltage ( V ) can be used as input logic signals.…”

Section: Resultsmentioning

confidence: 99%

“…Herein, it is noteworthy that the switch is used to better understand and easily demonstrate the proposed novel logic concept in this work, whose function can be readily implemented by a popular transistor in practical use (Figure S10, Supporting Information). As for the output logic value after a certain logic operation, it is still automatically stored in the unipolar RRAM cell, whose nonvolatile HRS and LRS are defined as output “0” and “1”, respectively. − Figure b shows the defined correspondence between input logic values and physical signals. That is, for S , input logic 0 and 1 mean that the switch is turned on and off, respectively, whereas for V , input logic 0 and 1 mean that it can write the Ta TE RRAM cell into state “0” and “1”, respectively.…”

Section: Resultsmentioning

confidence: 99%

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Improving Unipolar Resistive Switching Uniformity with Cone-Shaped Conducting Filaments and Its Logic-In-Memory Application

Gao

Liu

Chen

et al. 2018

ACS Appl. Mater. Interfaces

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Resistive random access memory (RRAM) with inherent logic-in-memory capability exhibits great potential to construct beyond von-Neumann computers. Particularly, unipolar RRAM is more promising because its single polarity operation enables large-scale crossbar logic-in-memory circuits with the highest integration density and simpler peripheral control circuits. However, unipolar RRAM usually exhibits poor switching uniformity because of random activation of conducting filaments and consequently cannot meet the strict uniformity requirement for logic-in-memory application. In this contribution, a new methodology that constructs cone-shaped conducting filaments by using chemically a active metal cathode is proposed to improve unipolar switching uniformity. Such a peculiar metal cathode will react spontaneously with the oxide switching layer to form an interfacial layer, which together with the metal cathode itself can act as a load resistor to prevent the overgrowth of conducting filaments and thus make them more cone-like. In this way, the rupture of conducting filaments can be strictly limited to the tip region, making their residual parts favorable locations for subsequent filament growth and thus suppressing their random regeneration. As such, a novel "one switch + one unipolar RRAM cell" hybrid structure is capable to realize all 16 Boolean logic functions for large-scale logic-in-memory circuits.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Improving Unipolar Resistive Switching Uniformity with Cone-Shaped Conducting Filaments and Its Logic-In-Memory Application

Gao

Liu

Chen

et al. 2018

ACS Appl. Mater. Interfaces

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“…Several techniques have been proposed to perform logic with memristors [7,[11][12][13][14][15]. Memristor-Aided loGIC (MAGIC) [9] is a stateful, in-memory, flexible logic family.…”

Section: Magicmentioning

confidence: 99%

Making Real Memristive Processing-in-Memory Faster and Reliable

Kvatinsky

2021

2021 17th International Workshop on Cellular Nanoscale Networks and Their Applications (CNNA)

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Memristive technologies are attractive candidates to replace conventional memory technologies, and can also be used to perform logic and arithmetic operations using a technique called 'stateful logic.' Combining data storage and computation in the memory array enables a novel non-von Neumann architecture, where both the operations are performed within a memristive Memory Processing Unit (mMPU). The mMPU relies on adding computing capabilities to the memristive memory cells without changing the basic memory array structure. The use of an mMPU alleviates the primary restriction on performance and energy in a von Neumann machine, which is the data transfer between CPU and memory.Here, the various aspects of mMPU are discussed, including its architecture and implications on the computing system and software, as well as examining the microarchitectural aspects. We show how mMPU can be improved to accelerate different applications and how the poor reliability of memristors can be improved as part of the mMPU operation.

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“…In this section, a concept to design logic gates with unipolar memristors is presented [28]. The operation mechanism is first presented, followed by examples of OR and NOT gates.…”

Section: A Unipolar Memristive Logic Gate Examplementioning

confidence: 99%