Logic‐in‐Memory Operation of Ternary NAND/NOR Universal Logic Gates using Double‐Gated Feedback Field‐Effect Transistors

Abstract

In this study, the logic‐in‐memory operations are demonstrated of ternary NAND and NOR logic gates consisting of double‐gated feedback field‐effect transistors. The component transistors reconfigure their operation modes into n‐ or p‐channel modes by adjusting the gate biases. The highly symmetrical operation between these operation modes with an excellent on‐current ratio of 1.03 enables three distinguishable and stable logic levels in the ternary logic gates. Moreover, the ternary logic gates maintain the three logic states for several tens to hundreds of seconds under zero‐bias condition. This study demonstrates that the ternary logic gates are promising candidates for next‐generation low‐power computing systems.

Gate-bias stability of triple-gated feedback field-effect transistors with silicon nanosheet channels

“…Moreover, the FBFET exhibits symmetrical reconfigurable characteristics with an on current ratio of 1.01 for the p-and n-channel modes. The symmetric eletrical behavior is very advantageous for implementing logic gates [23].…”

Design and performance analysis of Si-SiGe heterostructure based double gate feedback FET

“…The capacity of feedback field-effect transistors (FBFET) to circumvent the subthreshold slope constraint of conventional MOSFETs and to readily offer ultra-low subthreshold swing (∼0 mV/decade) has garnered significant attention in recent time. Utilizing a positive feedback mechanism, the device has shown remarkable performance in applications for memory [17], logic [18], neuromorphic [19], and biosensing [20]. Numerous FBFET-related studies [14][15][16][21][22][23][24][25] have been published in an effort to enhance performance characteristics such as I ON , high I ON /I OFF ratio, and low SS.…”