Long‐channel In _0.7 Ga _0.3 As/In _0.52 Al _0.48 As quantum‐well MOSFETs on InP substrate with record μ _{n_eff} = 6960 cm ² /V‐s

Abstract

Long-channel In 0.7 Ga 0.3 As/In 0.52 Al 0.48 As quantum-well (QW) metaloxide-semiconductor field-effect-transistors (MOSFETs) on InP substrate have been fabricated and characterised. The fabricated device with L g = 4 μm exhibits excellent maximum transconductance (g m_max) in excess of 0.48 mS/μm at V DS = 0.95 V, together with reasonably good electrostatic integrity of drain-induced-barrier-lowering < 40 mV/V and subthreshold-swing <100 mV/decade. Besides, the effective mobility (μ n_eff) of the same device has been extracted, revealing that the device in this work yields excellent μ n_eff = 6960 cm 2 /V-s at room temperature. To the knowledge of the authors, the value of μ n_eff in this work is the highest in any surface-channel InGaAs MOSFET technology.

Role of grooving angle of 14‐nm‐InAs channel quantum well MOSFETs in improving analogue/RF and linearity performance

“…With the remarkable advancement in material growth and process technology, the device design using high-mobility channel materials such as III-V semiconductors together with innovative architecture has been widely explored nowadays. Such a device emerges as a potential contender to the Si transistor to enable lowpower as well as high-speed electronics [1][2][3][4][5][6]. Among the III-V semiconductors, InAs has been extensively investigated as the channel material for MOSFETs because it exhibits outstanding electron mobility of 33,000 cm 2 /Vs at room temperature, which is, for instance, 20 times higher than that of Si.…”