Long-channel silicon-on-insulator MOSFET theory

Unification of asymmetric DG, symmetric DG and bulk undoped-body MOSFET drain current

“…In deriving (1), it was assumed that the electric field does not vanish inside the silicon film. For all practical situations the fourth term n i kTt Si ðbV D þ expðÀbV D Þ À 1Þ in (1) is negligible compared to the other three terms, and it may be ignored altogether [7]. It is important to note that the third term in (1) is negative and analogous to the first term.…”

“…a is an interaction factor representing the amount of charge coupling between the front and the back [6,7]. The potentials and a are calculated following the procedure described in [8,9].…”

Generic complex-variable potential equation for the undoped asymmetric independent double-gate MOSFET

“…These boundaries may be defined as curves on a front-gate/back-gate bias plane where the charge coupling factor, a [13] changes sign. This coupling factor is a measure that characterizes the electrical interaction between front and back surfaces [14], and is equal to zero at these regions' boundaries [15].…”

A Continuous Regional Current-Voltage Model for Short-channel Double-gate MOSFETs

“…When the backgate oxide thickness approaches that of the front gate, SOI conceptually becomes DG. Recently, there has been intense research interest in the development of compact models for SOI/DG MOSFETs [11][12][13][14][15]. Most of the models are integrable ones [7,11,13]; some are iterative [11,15] and others are explicit [13,14].…”

“…Undoped s-DG/a-DG MOSFETs were analyzed by Taur [11]. Ortiz-Conde et al presented an approximate solution to the undoped s-DG surface potential [13] in comparison with the iterative one, and an implicit solution by numerical iteration [15] for generic doped MOSFETs with two gates. Undoped s-DG MOSFETs have been solved both implicitly [16][17][18] and analytically [18][19][20], while undoped asymmetric cases have only been solved implicitly in literature [11].…”