Long indium-rich InGaAs nanowires by SAG-HVPE

Abstract

We demonstrate the selective area growth (SAG) of InGaAs nanowires (NWs) on GaAs (111)B substrates using hydride vapor phase epitaxy (HVPE). A high growth rate of more than 50 μm/h and high aspect ratio NWs were obtained. Composition along the NWs was investigated by energy dispersive x-ray spectroscopy (EDS) giving an average indium composition of 84%. This is consistent with the composition of 78% estimated from the photoluminescence (PL) spectrum of the NWs. Crystal structure analysis of the NWs by transmission electron microscopy indicated random stacking faults related to zinc-blende/wurtzite (ZB/WZ) polytypism. This work demonstrates the ability of HVPE for growing high aspect ratio InGaAs NW arrays.