Long-period waveguide gratings with amorphous silicon cladding layer on silicon-on-insulator substrates realized by anisotropic wet etching

Chuang, Ricky W.; Hsu, Mao-Teng; Wang, Guo-Shian

doi:10.7567/jjap.53.04eg15

Cited by 7 publications

(3 citation statements)

References 30 publications

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“…SOI substrates have also been used to fabricate photo-diodes and FETs by using a combination of techniques like ion implantation, plasma etching and chemical etching through standard CMOS technology [14,15]. A suspended SOI micro ring resonator has been fabricated using CMOS compatible technology for photothermal spectroscopy [16]. Si waveguides fabricated using standard lithography technique from SOI shows high confinement and nonlinear optical effects [17].…”

Section: Introductionmentioning

confidence: 99%

Si microline array based highly responsive broadband photodetector fabricated on silicon-on-insulator wafers

Sett¹,

Aggarwal²,

Singha³

et al. 2020

Semicond. Sci. Technol.

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We report a high responsivity broad band photodetector working in the wavelength range of 400-1100 nm made from a horizontal array of Si microlines (line width ∼1 μm) fabricated on a silicon-on-insulator (SOI) wafer. The array was made using a combination of plasma etching, wet etching and electron beam lithography. It forms a partially suspended (nearly free) Silicon microstructure on SOI. The array detector under full illumination of the device shows a peak Responsivity of 28 A W −1 at 750 nm, at a bias of 1 V which is more than an order of magnitude of the responsivity in a typical commercial Si detector (1 A W −1 ). In a broad band of 400-1000 nm the responsivity of the detector is in excess of 10 A W −1 . We could isolate the contributions of different parts of the microline to the photocurrent by using focused illumination. It was established through simulation that the partial suspension of the microlines in the array is necessary to obtain such high responsivity. The partial suspension isolates the microlines from the bulk of the wafer and inhibits carrier recombination by the underlying oxide layer leading to enhanced photoresponse which has been validated through simulation.

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Section: Introductionmentioning

confidence: 99%

Si microline array based highly responsive broadband photodetector fabricated on silicon-on-insulator wafers

Sett¹,

Aggarwal²,

Singha³

et al. 2020

Semicond. Sci. Technol.

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“…Several material systems, including silicon-on-insulator (SOI), silicon, LiNbO 3 and polymers have been used to achieve LP-WGs chip. [9][10][11][12] As a multi-functional material system, polymers exhibit well-controlled refractive indices, highly flexible structures, and large thermo-optic (TO) and electrooptic (EO) coefficients which can be conductive to realizing the monolithic integration with LPWGs-based tunable wavelength filter module. [13,14] At present, some studies have reported polymer LPWGs produced by reactive ion etching (RIE), [15] soft lithography, [16] or induced refractive index modulation.…”

Section: Introductionmentioning

confidence: 99%

Tunable wavelength filters using polymer long-period waveguide gratings based on metal-cladding directly defined technique

Wang¹,

Chen²,

Zheng³

et al. 2017

Chinese Phys. B

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In this work, long-period waveguide grating-based tunable wavelength filters using organic-inorganic grafting poly(methyl methacrylate) (PMMA) materials are designed and fabricated by metal-cladding directly defined technique. The thermal stabilities and optical properties of the organic-inorganic grafting PMMA core materials are analyzed. Structures and performance parameters of the waveguide gratings and self-electrode heaters are designed and simulated. The contrast of the filter is about 15 dB and the resonant wavelength can be tuned by different electric powers applied to the metal-cladding self-electrode heaters. The temperature sensitivity is 3.5 nm/ • C and the switching time is about 1 ms. The technique is very suitable for realizing the optoelectronic integrated wavelength-division-multiplexing systems.

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“…So far, many high-performance building blocks for Si PICs have been achieved, including passive components, 2,21) modulators, [22][23][24] and photodetectors, [25][26][27] whose performances are almost comparable with those of PICs based on group III-V materials. In a Si PIC, the building components can be interconnected by optical waveguides on the same Si chip so that it becomes much easier to ensure a well-matched optical path length.…”

Section: Introductionmentioning

confidence: 99%

Ultracompact 100 Gbps coherent receiver monolithically integrated on silicon

Gong

Zhou

et al. 2016

Jpn. J. Appl. Phys.

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This work describes an ultracompact coherent receiver monolithically integrated on silicon. The coherent receiver integrates one 1D grating coupler, one 2D grating coupler, two 90° hybrids, and eight Ge photodetectors in an area of only 1.3 × 1.4 mm2, which is about half the size of the smallest previously reported receiver. The design and performances of the components and the integrated coherent receiver are presented. The receiving of 100 Gbps polarization-division-multiplexed quadrature phase-shift keying (PDM-QPSK) signals is also successfully demonstrated.

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Long-period waveguide gratings with amorphous silicon cladding layer on silicon-on-insulator substrates realized by anisotropic wet etching

Cited by 7 publications

References 30 publications

Si microline array based highly responsive broadband photodetector fabricated on silicon-on-insulator wafers

Si microline array based highly responsive broadband photodetector fabricated on silicon-on-insulator wafers

Tunable wavelength filters using polymer long-period waveguide gratings based on metal-cladding directly defined technique

Ultracompact 100 Gbps coherent receiver monolithically integrated on silicon

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