Long-Reach E-band HPA for 5G Radio Link

Colzani, Alberto; Fumagalli, Matteo; Fonte, A.; Traversa, Antonio; Ture, Erdin

doi:10.23919/eumc54642.2022.9924287

Cited by 2 publications

(1 citation statement)

References 4 publications

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“…Recently, a 10-km hop with a data rate of 10 Gb/s has been demonstrated [2] using a GaN PA [3]. To achieve this, two PAs are combined to generate 4 W of output power at the PA module.…”

Section: Introductionmentioning

confidence: 99%

2.6- and 4-W E-Band GaN Power Amplifiers With a Peak Efficiency of 22% and 15.3%

Cimbili

Friesicke

Raay

et al. 2023

IEEE Microw. Wireless Tech. Lett.

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In this letter, we report two high-power gallium nitride (GaN) power amplifiers (PAs) in the Satcom E-band (71-86 GHz) with an output power of 2.6 and 4 W, designed by incorporating an ultralow-loss ON-chip integrated power combiner. The first one is a three-stage four-way combining (unit) PA, and the second one is an eight-way combining balanced PA. The unit PA produces a saturated output power ( P SAT ) of 34.2 dBm (2.6 W), a peak power-added-efficiency (PAE) of 22%, and an associated power gain of 16.2 dB at 74 GHz. This performance was partly made possible by the design and optimization of the low-loss integrated power combiner, which minimized the losses in the matching networks. In addition, the balanced PA produces a P SAT of 36 dBm (4 W), P 1 dB of 35.6 dBm (3.63 W), with an associated PAE of 15.3% at 80 GHz. To the best of the authors' knowledge, this is the highest output power (4 W) and the highest PAE (22%) for a PA > 2.5 W reported in any of the III-V technologies at E-band. Index Terms-E-band, gallium nitride (GaN), high efficiency, high frequency, high output power, low-loss, mm-wave, monolithic microwave integrated circuit (MMIC), ON-chip, power amplifier (PA), power combining, W -band.

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“…Recently, a 10-km hop with a data rate of 10 Gb/s has been demonstrated [2] using a GaN PA [3]. To achieve this, two PAs are combined to generate 4 W of output power at the PA module.…”

Section: Introductionmentioning

confidence: 99%

2.6- and 4-W E-Band GaN Power Amplifiers With a Peak Efficiency of 22% and 15.3%

Cimbili

Friesicke

Raay

et al. 2023

IEEE Microw. Wireless Tech. Lett.

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Modelado del comportamiento de un amplificador de potencia para 5G utilizando Machine Learning

Chiri Yupanqui,

Condori Quispe

2024

Jour. Bol. Cien.

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El propósito principal de esta investigación es modelar el comportamiento de un amplificador de radiofrecuencia (RF) mediante técnicas de machine learning. Para lograr este objetivo, utilizamos el software Advanced Design System (ADS) de Keysight, primero se obtienen los datos de gráficas relevantes, los cuales se transforman en datos tabulares. Estos datos son esenciales para el entrenamiento del modelo. Se emplea el intérprete de Python de ADS, para este propósito. Los resultados obtenidos muestran una notable concordancia con el comportamiento esperado del amplificador RF, lo que confirma la efectividad del enfoque propuesto. Este hallazgo no sólo valida la viabilidad de modelar amplificadores, sino que también sugiere la aplicabilidad de estas técnicas en el modelado de diversos sistemas electrónicos con un alto grado de precisión y fiabilidad.

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Long-Reach E-band HPA for 5G Radio Link

Cited by 2 publications

References 4 publications

2.6- and 4-W E-Band GaN Power Amplifiers With a Peak Efficiency of 22% and 15.3%

2.6- and 4-W E-Band GaN Power Amplifiers With a Peak Efficiency of 22% and 15.3%

Modelado del comportamiento de un amplificador de potencia para 5G utilizando Machine Learning

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