Long, Short, Monolithic - The Gate Loop Challenge for GaN Drivers: Invited Paper

Kaufmann, Maik Peter; Seidel, Achim; Wicht, Bernhard

doi:10.1109/cicc48029.2020.9075937

Cited by 26 publications

(3 citation statements)

References 13 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…As for SiC, vendors also offer transistor with integrated gate drivers, as well as complete power modules. In addition, GaN vendors offer the possibility to purchase transistors with monolithically integrated drivers, which is of key importance [11], [12], [13]: 1) for the reduction of the gate-loop inductance (to minimize the gate stress during turn-on); 2) for the mitigation of the common-source inductance (to achieve higher slew rates); and 3) to allow the design of highly effective thermal and current protection circuits.…”

Section: B Typical Voltage Ranges Of Applicationmentioning

confidence: 99%

Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives

Buffolo,

Favero,

Marcuzzi

et al. 2024

IEEE Trans. Electron Devices

View full text Add to dashboard Cite

We present a comprehensive review and outlook of silicon carbide (SiC) and gallium nitride (GaN) transistors available on the market for current and next-generation power electronics. Material properties and structural differences among GaN and SiC devices are first discussed. Based on the analysis of different commercially available GaN and SiC power transistors, we describe the state-of-the-art of these technologies, highlighting the preferential power conversion topologies and the key characteristics of each technological platform. Current and future fields of application for GaN and SiC devices are also reviewed. The article also reports on the main reliability aspects related to both technologies. For GaN HEMTs, threshold voltage stability, dynamic ON-resistance, and breakdown limitation are described, whereas for SiC MOSFETs the analysis also focuses on gate oxide failure and short-circuit (SC) robustness. Finally, we give an overview on the perspective of such materials in different fields of interest. An indication of possible future improvements and developments for both technologies is drawn. The requirements for hybrid converters, along with Manuscript

show abstract

Section: B Typical Voltage Ranges Of Applicationmentioning

confidence: 99%

Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives

Buffolo,

Favero,

Marcuzzi

et al. 2024

IEEE Trans. Electron Devices

View full text Add to dashboard Cite

show abstract

“…5: Q6-Q9, D2, C1) ensures fast turn-on and turn-off switching. GaN-based gate drivers have already been described in many publications [39][40][41][42][43][44][45][46][47][48][49][50][51][52]. There are several approaches to realize the control unit, e.g.…”

Section: B Controlmentioning

confidence: 99%

GaN Active Rectifier Diode

Basler

Reiner

Moench

et al. 2022

IEEE Open J. Power Electron.

View full text Add to dashboard Cite

Active or synchronous rectification is used today to further increase the efficiency of mass-market power supplies by eliminating the turn-on voltage of rectifier diodes, thus reducing conduction losses. However, the active rectification is usually realized by two devices: a power MOSFET and a control circuit to imitate an ideal diode behavior. This paper presents a GaN active rectifier diode consisting of a 600 V power transistor, a control circuit with gate driver, and a supply generation, all monolithically realized in a GaN power integrated circuit (IC). This enables a true two-terminal device that can directly replace a rectifier diode. In order to evaluate the proposed conduction loss reduction by replacing a rectifier diode by an active diode, the theoretical limits at circuit level and at semiconductor level are analyzed. The GaN active rectifier diode is demonstrated in a half-wave rectification (110/230 VAC, 50/60 Hz) up to a forward current of 6 A. A single-device realization of low-loss GaN active rectifier diodes is more cost-efficient than a multi-chip or package-integrated solution.

show abstract

“…(DCFL) [15][16][17][18][19] and analog circuits like amplifiers, comparators or references [17,[20][21][22][23][24]. Combined or cascaded circuits such as gate drivers [25][26][27][28][29][30], and protection functions [31,32] can be implemented using digital and analog circuits. The development of these buildings or function blocks allows the realization of more complex circuits consisting of power device(s), driver, control [33] in combination with protection [6] as well as power supply [34].…”

Section: Introductionmentioning

confidence: 99%

Building Blocks for GaN Power Integration

Basler¹,

Reiner

Moench

et al. 2021

IEEE Access

View full text Add to dashboard Cite

GaN technology is on the advance for the use in power ICs thanks to space-saving integrated circuit components and the increasing number of integrated devices. This work experimentally investigates a number of key building blocks for GaN power integration. First, an overview of the active and passives devices of the technology is given with focus on area-efficient layouts for power transistors and limitations of on-chip capacitors and inductors with comparison to other IC technologies. Digital and analog basic circuits as part of device libraries are examined and optimized with regard to area-efficiency. The NOT gates have active areas as low as 56.7 µm 2 and max. static currents of 0.12 mA with high noise margins. Further digital gates are presented. For the analog circuits, differential amplifiers and voltage reference concepts are presented and compared. Finally, GaN power integration is discussed, and integration levels are defined and described. The GaN technology is compared with other IC technologies, and future challenges and perspectives are shown. GaN power integration based on building blocks aims to exploit the full potential of the lateral GaN technology in order to compete with Si-based IC technologies in the future.INDEX TERMS Gallium nitride, integrated circuit technology, power integrated circuits, logic circuits, analog circuits

show abstract

Long, Short, Monolithic - The Gate Loop Challenge for GaN Drivers: Invited Paper

Cited by 26 publications

References 13 publications

Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives

Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives

GaN Active Rectifier Diode

Building Blocks for GaN Power Integration

Contact Info

Product

Resources

About