Long-Term Hole Spin Memory in the Resonantly Amplified Spin Coherence of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>InGaAs</mml:mi><mml:mo>/</mml:mo><mml:mi>GaAs</mml:mi></mml:math>Quantum Well Electrons

Yugova, I. A.; Соколова, А.; Yakovlev, D. R.; Greilich, A.; Reuter, D.; Wieck, A. D.; Bayer, М.

doi:10.1103/physrevlett.102.167402

Cited by 41 publications

(65 citation statements)

References 22 publications

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“…20 Here, we present time-resolved optical studies of a highmobility (110)-grown 2DES using the resonant spin amplification (RSA) technique, 21,22 a variation of the TRFR technique, which has been successfully applied to study electron and hole spin dynamics in systems of different dimensionality. [22][23][24][25] We observe SDTs of about 100 ns at low temperatures, exceeding the previously reported values for free electrons in a 2DES by almost one order of magnitude. We show that the SDTs extracted from RSA spectra are not limited by the BAP mechanism and use an optical gating technique to control the 2DES carrier density and growth-axis symmetry to reach even higher SDT values.…”

Section: Introductionmentioning

confidence: 53%

Strongly anisotropic spin relaxation revealed by resonant spin amplification in (110) GaAs quantum wells

et al. 2012

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We have studied spin dephasing in a high-mobility two-dimensional electron system confined in a GaAs/AlGaAs quantum well grown in the [110] direction, using the resonant spin amplification (RSA) technique. From the characteristic shape of the RSA spectra, we are able to extract the spin dephasing times (SDTs) for electron spins aligned along the growth direction or within the sample plane, as well as the g factor. We observe a strong anisotropy in the spin dephasing times. While the in-plane SDT remains almost constant as the temperature is varied between 4 and 50 K, the out-of-plane SDT shows a dramatic increase at a temperature of about 25 K and reaches values of about 100 ns. The SDTs at 4 K can be further increased by additional, weak above-barrier illumination. The origin of this unexpected behavior is discussed. The SDT enhancement is attributed to the redistribution of charge carriers between the electron gas and remote donors.

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Section: Introductionmentioning

confidence: 53%

Strongly anisotropic spin relaxation revealed by resonant spin amplification in (110) GaAs quantum wells

et al. 2012

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“…Accounting for the spread of Ω does not change the signals significantly. Figure 10(a) corresponds to a situation that is obtained for resident electrons oriented by excitation of the T − trion in n-type (In,Ga)As/GaAs QWs [22,42]. In such structures the in-plane hole g factor is small compared with the electron g factor, and consequently Ω ≪ ω, so that the spin precession of the T − trion can be neglected.…”

Section: Spread Of G Factorsmentioning

confidence: 99%

“…Figure 7(a) illustrates the situation that is typical for n-type QWs [31,42], in which trion spin precession is absent. Figure 7(b) shows the RSA signal with a trion spin precession frequency Ω = 4ω, which may correspond to the T + trion case in ptype QWs [36,44].…”

Section: B Slow Spin Relaxation In Trion: Effect Of Trion Spin Dynamicsmentioning

confidence: 99%

Coherent spin dynamics of electrons and holes in semiconductor quantum wells and quantum dots under periodical optical excitation: Resonant spin amplification versus spin mode locking

et al. 2012

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, file = rsa-modlock-29dec11.tex, printing time = 19 : 55)The coherent spin dynamics of resident carriers, electrons and holes, in semiconductor quantum structures is studied by periodical optical excitation using short laser pulses and in an external magnetic field. The generation and dephasing of spin polarization in an ensemble of carrier spins, for which the relaxation time of individual spins exceeds the repetition period of the laser pulses, are analyzed theoretically. Spin polarization accumulation is manifested either as resonant spin amplification or as mode-locking of carrier spin coherences. It is shown that both regimes have the same origin, while their appearance is determined by the optical pump power and the spread of spin precession frequencies in the ensemble.

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“…In doped samples with spin lifetimes much longer than the recombination time, time-resolved Kerr and Faraday rotation techniques could in principle allow measurements of the spin dynamics after the electronic system has equilibrated, as it is realized, e.g., in Refs. [15,171,172]. In these experiments, however, the repetition rate of the laser system significantly exceeds the spin dephasing rate so that spin dephasing times are extracted via resonant spin amplification, an extension of the time-resolved measurement principle introduced by Kikkawa and Awschalom in 1998 [15], in which a transverse magnetic field is swept while the time delay between pump and probe pulse is kept constant.…”

Section: Conventional Experimental Probesmentioning

confidence: 99%

Semiconductor spin noise spectroscopy: Fundamentals, accomplishments, and challenges

Müller

Oestreich

Römer

et al. 2010

Physica E: Low-dimensional Systems and Nanostructures

125

126

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Semiconductor spin noise spectroscopy (SNS) has emerged as a unique experimental tool that utilizes spin fluctuations to provide profound insight into undisturbed spin dynamics in doped semiconductors and semiconductor nanostructures. The technique maps ever present stochastic spin polarization of free and localized carriers at thermal equilibrium via the Faraday effect onto the light polarization of an off-resonant probe laser and was transferred from atom optics to semiconductor physics in 2005. The inimitable advantage of spin noise spectroscopy to all other probes of semiconductor spin dynamics lies in the fact that in principle no energy has to be dissipated in the sample, i.e., SNS exclusively yields the intrinsic, undisturbed spin dynamics and promises optical non-demolition spin measurements for prospective solid state based optical spin quantum information devices. SNS is especially suitable for small electron ensembles as the relative noise increases with decreasing number of electrons. In this review, we first introduce the basic principles of SNS and the difference in spin noise of donor bound and of delocalized conduction band electrons. We continue the introduction by discussing the spectral shape of spin noise and prospects of spin noise as a quantum interface between light and matter. In the main part, we give a short overview about spin relaxation in semiconductors and summarize corresponding experiments employing SNS. Finally, we give in-depth insight into the experimental aspects and discuss possible applications of SNS.

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Long-Term Hole Spin Memory in the Resonantly Amplified Spin Coherence ofInGaAs/GaAsQuantum Well Electrons

Cited by 41 publications

References 22 publications

Strongly anisotropic spin relaxation revealed by resonant spin amplification in (110) GaAs quantum wells

Strongly anisotropic spin relaxation revealed by resonant spin amplification in (110) GaAs quantum wells

Coherent spin dynamics of electrons and holes in semiconductor quantum wells and quantum dots under periodical optical excitation: Resonant spin amplification versus spin mode locking

Semiconductor spin noise spectroscopy: Fundamentals, accomplishments, and challenges

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