Long Time Operation of Si:C Field Emitter Arrays in H2 Gas Atmosphere

Abstract

We measured current variation of carbonoized silicon-ˆeld emitter arrays (Si:C FEA) in hydrogen (H 2 ) ambient to show durability against hydrogen exposure. We operated both silicon-ˆeld emitter arrays (Si FEA) and Si:C FEA in H 2 atmosphere for 100 hours. Hydrogen gas is one of the major component of total residual pressure in ion implanter. As a result, the emission current from Si FEA decreased from 20 mA to 8 mA. But the emission current from Si:C FEA increased from 20 mA to 80 mA. It was shown that the durability of Si:C FEA against H 2 gas was better than that of Si FEA. . は じ め に