Long-wavelength (Ga, In)Sb/GaSb strained quantum well lasers grown by molecular beam epitaxy

Abstract

The molecular beam epitaxy growth of strained (Ga, In)Sb/GaSb quantum wells is investigated. In a narrow range of growth conditions, (Ga, In)Sb quantum well structures exhibiting excellent structural properties as well as intense and narrow photoluminescence transitions are obtained. Stimulated emission at 1.98 µm is observed at room temperature from laser diodes with Ga 0.74 In 0.26 Sb/GaSb strained quantum wells as the active zone. The lasers exhibit threshold current densities as low as 280 A cm −2 and a characteristic temperature of 75 K.

Infrared photomodulation spectroscopy of an In 0.22Ga 0.78Sb/GaSb single quantum well

“…Figure 1 shows a comparison of PL, R, PR, T and PT spectra of an In 0.32 Ga 0.68 Sb/GaSb single quantum well measured at T = 10 K. In the PL spectrum (i) three peaks are observed. The two high-energy peaks (at 0.776 and 0.790 eV) are GaSb related and were previously observed in GaSb-based quantum well structures [4,5,8]. The third dominating, very narrow (3.5 meV) peak at 0.691 eV, originates from the quantum well and represents ground state heavy hole exciton radiative recombination.…”

“…The In x Ga 1−x Sb/GaSb strained system has potential applications in the 1.5-3 µm spectral region, for example in trace gas sensing, atmospheric pollution and drug monitoring, medical procedures such as laser surgery and medical diagnostics, absorption spectroscopy or long-haul telecommunications, and especially low threshold current lasers at wavelengths ranging from 1.5 to 2.2 µm [1][2][3][4]. Despite the potential interest of this material only very few characterization studies have been reported till now [5][6][7][8][9].…”

Carrier dynamics and photoluminescence quenching mechanism of strained InGaSb/AlGaSb quantum wells

“…13 The ternary InGaSb alloys are suitable to tailor wavelengths in the near infrared and longer wavelengths over 2 lm. [13][14][15][16] Recently, Lai et al demonstrated 340-W peak output at the wavelength of 2 lm from an InGaSb/AlGaSb VECSEL operated at RT. 17 Continuouswave (CW) operation at RT was also achieved but the output power was limited to 0.12 W. 18 The main factor that limits the VECSEL maximum light output was heating due to nonradiative recombination.…”

High temperature continuous wave operation of Sb-based vertical external cavity surface emitting laser near 2.3μm

“…Before the re-growth of the MQW active region on the Bragg mirror, the crystalline and luminescence properties of MQW active regions grown on GaSb substrates at different temperatures were measured. Indeed, this growth parameter was found as one of the most relevant for obtaining a high luminescence efficiency [12,13]. Three MQW GaInAsSb/AlGaAsSb active layers were grown at 1 mm/h at three different growth temperatures, i.e.…”