Long-wavelength infrared quantum-dot based interband photodetectors

Gustafsson, Oscar; Berggren, Jesper; Ekenberg, U.; Hallén, Anders; Hammar, Mattias; Höglund, Linda; Karim, Amir; Noharet, Bertrand; Wang, Q.; Громов, А. Н.; Almqvist, Susanne; Zhang, A.; Junique, Stéphane; Andersson, Jan Y.; Asplund, Carl; Würtemberg, R. Marcks von; Malm, Hedda; Martijn, Henk

doi:10.1016/j.infrared.2010.12.031

Cited by 8 publications

(2 citation statements)

References 17 publications

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“…For E1-E0 intraband transition (figure 7(b)), the increase in the thickness of the GaAs 0.80 Sb 0.20 capping layer leads to only a slight increase in the α intensity and a rightward shift of the α peak energy compared to the InAs/GaAs QD. This property may be beneficial for the QDIPs that require long interband radiative recombination lifetime but are excited by the intraband transition [45].…”

Section: Capping Layer Thicknessmentioning

confidence: 99%

Tuning electrical and optical properties of InAs/GaAs_1−xSb _x quantum dots

Bao,

Liu,

Liu

et al. 2023

J. Phys. D: Appl. Phys.

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Understanding the electrical and optical properties of InAs/GaAs(Sb) quantum dots (QDs) is essential for designing and improving the performance of related semiconductor QD devices. In this paper, the effects of In segregation, QD size, capping layer thickness and Sb composition on the electrical and optical properties of type I and type II InAs/GaAs1−x Sb x ( 0 ⩽ x ⩽ 1 ) QDs are systematically investigated and general regularities are summarized. The comparisons of electron distribution probabilities, interband and intraband transition energies and absorption coefficients show that In segregation and QD size have a strong influence on the electron energy level positions of InAs QDs and that the trade-offs between absorption peak energy, absorption intensity and radiative lifetime of InAs/GaAs1−x Sb x QDs can be optimized by adjusting the thickness and Sb composition of the GaAs1−x Sb x capping layer. The results obtained are promising for the applications in the pre-design and performance feedback of the QD devices such as QD lasers, QD infrared detectors and intermediate band solar cells.

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Section: Capping Layer Thicknessmentioning

confidence: 99%

Tuning electrical and optical properties of InAs/GaAs_1−xSb _x quantum dots

Bao,

Liu,

Liu

et al. 2023

J. Phys. D: Appl. Phys.

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“…Semiconductor nanostructures with Type-2 band-gap alignment have attracted much attention for optoelectronic device applications such as long infrared (IR) lasers or detectors, because these devices are expected to be operated at room temperature [1,2]. InSb quantum dots (QDs) with InAs matrices are a promising type-2 quantum structure for the midinfrared range, 3~5 μm [3,4].…”

Section: Introductionmentioning

confidence: 99%

MBE Growth of Sb-based type-2 quantum dots for the application to long wavelength sensors

Lee

Song

Kim

et al. 2012

Quantum Sensing and Nanophotonic Devices IX

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InSb nanostructures embedded in InAs and InAsSb matrices were grown on InAs (001) and GaAs (001) substrates by molecular beam epitaxy. The diameter and height of InSb quantum dots (QDs) on InAs with 2ML-InSb coverage grown by Stranski-Krastanov (S-K) are ~36.8 nm and ~3.1 nm, respectively. The density of QDs is ~2.5×10 10 cm -2 . The size distribution of InSb QDs on InAs with 2ML-InSb coverage grown by migration enhanced epitaxy (MEE) was larger than that of its S-K counterpart. Unique InSb quantum dashes (Q-dashes) on InAsSb elongated along two directions were found on an AlSb-buffered GaAs substrate. InSb Q-dashes grown by migration enhanced epitaxy (MEE) were ~159 nm in length, ~63 nm in width, and ~11 nm in height. A large reduction of volume of InSb structures between those in the matrix and those on the surface was found. Threading dislºCations resulting from the Q-dash structures were also observed. This may be attributed to As-Sb exchange.

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