2016
DOI: 10.1063/1.4943169
|View full text |Cite
|
Sign up to set email alerts
|

Long wavelength optical response of graphene-MoS2 heterojunction

Abstract: The optical response of graphene-MoS2 heterojunctions is investigated. Spatial resolution photoresponse maps obtained using multiple bias conditions are measured and analyzed by exciting the graphene-MoS2 heterojunction area, MoS2, and Ti-MoS2 junction on the same device with an 800 nm wavelength Ti-Sapphire raster scanning laser. It is found that a large photothermal electric (PTE) effect is the dominant mechanism for photoresponse in a graphene-MoS2 heterojunction. Responsivities of 0.139 mA/W and 0.019 mA/W… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1

Citation Types

0
3
0

Year Published

2017
2017
2023
2023

Publication Types

Select...
6
1

Relationship

0
7

Authors

Journals

citations
Cited by 11 publications
(3 citation statements)
references
References 47 publications
0
3
0
Order By: Relevance
“…The absence of high quality p–n junctions also limits the performance of the MoS 2 based devices. Although photodetectors based on mono/multilayer MoS 2 heterostructure have shown excellent device characteristics in terms of high sensitivity (up to 7 A/W) and wide band response 26 27 28 29 their applicability still suffers due to complex fabrication process.…”
mentioning
confidence: 99%
“…The absence of high quality p–n junctions also limits the performance of the MoS 2 based devices. Although photodetectors based on mono/multilayer MoS 2 heterostructure have shown excellent device characteristics in terms of high sensitivity (up to 7 A/W) and wide band response 26 27 28 29 their applicability still suffers due to complex fabrication process.…”
mentioning
confidence: 99%
“…As shown in Figure 1f, the main C 1s peak at 284.5 eV corresponds to the sp 2 hybridized carbon atoms (C−C bond). 30 In addition, a small shoulder peak at 285.9 eV, corresponding to the C−O bonds, 31 is noted to appear due to the structural disorder around the graphene edges or slight oxidation of the prepared GFs. 32 Overall, the findings confirm the successful synthesis of 3D-GFs.…”
Section: Resultsmentioning
confidence: 99%
“…For example, the phosphorene/graphene heterostructure displays tuning of the contact from n-type Schottky to p-type Schottky and then ohmic by simply tailoring the relative position of the graphene's Fermi level within the phosphorene's band gap [2]. Additional examples of such heterostructures include semiconducting transition metal dichalcogenides and graphene, which are proposed for largescale 2D electronics [3][4][5][6][7][8][9]. Note that synthesis and characterization of such heterostructures involving graphene is of particular interest due to graphene being a material with a high electron mobility [10].…”
Section: Introductionmentioning
confidence: 99%