Abstract-This paper gives an overview on the design, fabrication, and characterization of quantum cascade detectors. They are tailorable infrared photodetectors based on intersubband transitions in semiconductor quantum wells that do not require an external bias voltage due to their asymmetric conduction band profile. They thus profit from favorable noise behavior, reduced thermal load, and simpler readout circuits. This was demonstrated at wavelengths from the near infrared at 2 m to THz radiation at 87 m using different semiconductor material systems. In the NIR, fast intraband semiconductor photodetectors are only available for wavelengths up to about 1.6 m. On the other tail of optical frequencies, namely for detection of THz radiation, bolometers are widely used; however, they are not well suited for high-speed applications. For fast light detection at wavelengths above 1.6 m, ISB photodetectors are very promising candidates. As unipolar devices, their fundamental F. R. Giorgetta was with the University of Neuchatel, 2000 Neuchatel, Switzerland. He is now with the National