Longitudinal Muon Spin Depolarization in Ge-Rich SiGe Alloys

Mengyan, Patrick W.; Celebi, Y.G.; Lichti, R. L.; Carroll, B.R.; Baker, B.B.; Bani-Salameh, H.N.; Yonenaga, Ichiro

doi:10.1016/j.phpro.2012.04.076

Cited by 2 publications

(6 citation statements)

References 4 publications

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“…Moreover, in several recent experiments (e.g. in the dielectric oxide Lu 2 O 3 , 19 in solar cell materials, 17 or in alloyed Ge) 22 an increase of the diamagnetic fraction with decreasing temperature, at low temperatures, has been observed. We suggest that this effect is related to the deposited energy -a thermal spike -at the end of the muon trajectory in implantation experiments.…”

Section: And References Therein)mentioning

confidence: 89%

“…The final states are not observed in this case due to dephasing, except the ionized one. Mengyan et al give a different interpretation of the low-temperature signals; 22 they attribute them to an acceptor-like configuration which is formed by the pickup of an electron from the host, forming a Mu − configuration with a diamagnetic frequency behavior. The additional pickup of a hole (h + ) leads to a weakly paramagnetic acceptor configuration with a similar µSR behavior as the proposed donor-like transition state in our model.…”

Section: Ge-rich Sige Alloysmentioning

confidence: 99%

“…The parameters are chosen to simulate approximately the total amplitude of the Si 0.09 Ge 0.91 experiment of Ref. 22, presented in Fig. 3.…”

Section: A the Phenomenological Modelmentioning

confidence: 99%

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Thermal spike in muon implantation

et al. 2019

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In muon spin rotation experiments, the diamagnetic fraction observed at low temperatures is a consequence of the muon interaction with the lattice during the incorporation process and depends on the properties of the material. An increase of the diamagnetic fraction with decreasing temperature is observed in some cases, which we attribute to a thermal spike at the end of the muon trajectory. The thermal spike is due to energy liberated not only during the muon stopping process but also as a consequence of the stress release when the electron bound to a muon in a unrelaxed configuration jumps to a neighboring lattice site. The magnitude and time extension of this effect is more significant for highly disturbed lattices which exhibit very low thermal conductivities at low temperatures. A phenomenological description of some selected examples is presented, together with a discussion about heat transport, using existing models for the thermal spike.

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Section: And References Therein)mentioning

confidence: 89%

Section: Ge-rich Sige Alloysmentioning

confidence: 99%

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Thermal spike in muon implantation

et al. 2019

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“…Mengyan et al [9] studied Ge-rich SiGe alloys with the longitudinal-field µSR method. The authors distinguish three differently relaxing signals: fast, intermediate and slow.…”

Section: Ge-rich Sige Alloymentioning

confidence: 99%

“…In the present contribution, the transition state model is applied to Al 2 O 3 [6] and to a Ge-rich SiGe alloy [9].…”

Section: Introductionmentioning

confidence: 99%

Muonium reaction in semiconductors and insulators: The role of the transition state

Vilão

Alberto²,

Ribeiro³

et al. 2023

J. Phys.: Conf. Ser.

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A general scheme for the reaction of muonium with the host lattice of semiconductors and insulators is derived. We begin our considerations when the muonium has been slowed down to a kinetic energy of one to a few eV, an energy at which electron excitations across the band gap are no longer possible and the subsequent deceleration is due to elastic or inelastic processes. Elastic scattering causes energy loss in small portions, on the order of 1 ‰ of kinetic energy per scattering, and eventually leads to atomic muonium at an interstitial site. At these low energies, however, the muonium may stay at one site long enough, especially at the top of the diffusion barrier, to excite a local vibration of the nearest lattice atoms, e.g., a stretching or breathing mode, leading to the stopping of muonium. The configuration formed after the excitation of the local phonon is designated “transition state”. This state may exist for some time and may be seen in /µSR as a fast relaxing diamagnetic signal. The decay of the transition state may lead either to interstitial atomic muonium or to a bound configuration in the neutral or positive charge state. In the present paper we apply this model to Al2O3 and to a Ge-rich SiGe alloy.

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Longitudinal Muon Spin Depolarization in Ge-Rich SiGe Alloys

Cited by 2 publications

References 4 publications

Thermal spike in muon implantation

Thermal spike in muon implantation

Muonium reaction in semiconductors and insulators: The role of the transition state

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