2013 IEEE MTT-S International Microwave Symposium Digest (MTT) 2013
DOI: 10.1109/mwsym.2013.6697630
|View full text |Cite
|
Sign up to set email alerts
|

Loss mechanism and high-low doping profile effects of silicon substrate with different resistivities at High frequency

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
1
0

Year Published

2014
2014
2024
2024

Publication Types

Select...
3

Relationship

0
3

Authors

Journals

citations
Cited by 3 publications
(1 citation statement)
references
References 9 publications
0
1
0
Order By: Relevance
“…High resistivity substrates (HRS) are used for less loss in RF applications [2]. In these applications noise isolation is critical as well as to minimize eddy currents in the substrate and enhance the quality factor of all passive devices built on it that are critical for RF applications [3].…”
Section: Substrate Structuresmentioning
confidence: 99%
“…High resistivity substrates (HRS) are used for less loss in RF applications [2]. In these applications noise isolation is critical as well as to minimize eddy currents in the substrate and enhance the quality factor of all passive devices built on it that are critical for RF applications [3].…”
Section: Substrate Structuresmentioning
confidence: 99%