Loss Reduction Technique in Ferroelectric Tunable Devices by Laser Microetching. Application to a CPW Stub Resonator in &lt;inline-formula&gt; &lt;tex-math notation="LaTeX"&gt;$X$ &lt;/tex-math&gt; &lt;/inline-formula&gt;-Band

Corredores, Yonathan; Simon, Quentin; Benzerga, Ratiba; Castel, Xavier; Sauleau, Ronan; Febvrier, Arnaud Le; Députier, Stéphanie; Guilloux-Viry, M.; Zhang, Ling Yan; Tanné, Gérard

doi:10.1109/ted.2014.2360846

Cited by 4 publications

(3 citation statements)

References 29 publications

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“…Although a significant decrease of the KNN loss was achieved, new attempts are expected to further restrict it in view of microwave device applications. Some solutions are readily available, such as ferroelectric/dielectric multilayers deposition [38] or by confining the ferroelectric layer into the efficient regions of the microwave devices [39].…”

Section: Temperature-dependent Dielectric Characteristicsmentioning

confidence: 99%

Enhanced tunability and temperature-dependent dielectric characteristics at microwaves of K0.5Na0.5NbO3 thin films epitaxially grown on (100)MgO substrates

Aspe

Castel

Demange

et al. 2021

Journal of Alloys and Compounds

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K 0.5 Na 0.5 NbO 3 thin films were deposited by pulsed laser deposition on (100)MgO substrates for microwave device applications. A fine epitaxial growth of pure perovskite phase was evidenced by X-ray diffraction. Dielectric characterizations were performed from 1 to 40 GHz using coplanar microwave devices printed on the 500 nm-thick K 0.5 Na 0.5 NbO 3 thin films. Dielectric permittivity  r = 355 and loss tangent tanδ = 0.35 at 10 GHz were retrieved without biasing. A comparison of the results with those retrieved from the resonant cavity J o u r n a l P r e -p r o o f 2 method (to characterize as-deposited films) showed no deleterious influence neither from the device patterning nor the thin film-device interface. A frequency tunability up to 22% was measured under a moderate external DC bias electric field E bias = 94 kV/cm. Temperature measurements from 20 to 240°C exhibited a permittivity increase up to  r = 975 coupled to a loss decrease tanδ = 0.25 at 10 GHz. According to such measurements, an orthorhombictetragonal phase transition was evidenced close to 220°C with an increase of the frequency tunability up to 34%. Comparison of the properties of such films with those grown on R-plane sapphire substrates demonstrated the benefit brought by the epitaxial growth of K 0.5 Na 0.5 NbO 3 films on (100) MgO.

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Section: Temperature-dependent Dielectric Characteristicsmentioning

confidence: 99%

Enhanced tunability and temperature-dependent dielectric characteristics at microwaves of K0.5Na0.5NbO3 thin films epitaxially grown on (100)MgO substrates

Aspe

Castel

Demange

et al. 2021

Journal of Alloys and Compounds

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“…To this end, the titanium and silver bilayers were first fully removed by chemical wet etching. Then, the laser microetching technique [20], [23], [24] was implemented to confine the ferroelectric layer only underneath and close to the CPW resonator; KTN was removed in non-critical areas (i.e. underneath the ground plane and the feeding line of the stub, see Fig.…”

Section: Confinement By Laser Micro-etchingmentioning

confidence: 99%

“…Although KTa 0.5 Nb 0.5 O 3 films exhibit high values of dielectric permittivity (e r ≈ 700-850 [13]), their applications at microwaves are still limited due to their significant intrinsic dielectric loss (tanδ r ≈ 0.3 at 10 GHz) [13]. Various solutions have already been investigated to lower the intrinsic loss of the material itself or the insertion loss of the related device: (i) use of a seed layer to improve the KTN crystalline quality [15], (ii) doping of KTN with iron [16], titanium [17] or MgO [18], (iii) deposition of ferroelectric/dielectric multilayers [19], (iv) ferroelectric material localization to reduce the insertion loss of the tunable devices printed on such films [20], [21], [22]. In this paper, a twofold and complementary approach is investigated to further reduce the total loss (intrinsic loss and insertion loss).…”

Section: Introductionmentioning

confidence: 99%

A Twofold Approach in Loss Reduction of KTa_0.5Nb_0.5O₃ Ferroelectric Layers for Low-Loss Tunable Devices at Microwaves

Cissé

Castel

Sauleau

et al. 2018

IEEE Trans. Ultrason., Ferroelect., Freq. Contr.

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Ferroelectric oxide films are attractive to design and fabricate reconfigurable and miniaturized planar devices operating at microwaves due to the large electric field dependence of their dielectric permittivity. In particular, KTaNbO (KTN) ferroelectric material presents a high tunability under moderate dc bias electric field. However, its intrinsic dielectric loss strongly contributes to the global loss of the related devices and limits their application areas at microwaves. In this paper, a twofold approach is investigated to reduce the device loss. The intrinsic loss of KTN is first reduced by doping the ferroelectric material with a low-loss dielectric material, namely, MgO. Second, the doped ferroelectric films are confined using an original laser microetching process. Both routes have been implemented here to provide a synergic effect on the total insertion loss of the microwave test device, namely, a coplanar waveguide stub resonator. The experimental data demonstrate a decrease of the intrinsic loss by a factor of ~2 and a decrease of the global loss by a factor of ~4 with a frequency tunability close to 10% at ~10 GHz under a moderate biasing (80 kV/cm).

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K x Na1−xNbO3 perovskite thin films grown by pulsed laser deposition on R-plane sapphire for tunable microwave devices

et al. 2018

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K x Na 1-x NbO 3 thin films with x = 0.5 and x = 0.7 were deposited by pulsed laser deposition onto R-cut sapphire substrates to be suitable for microwave applications. The 500-800 nm-thick films present a preferential (100) orientation. The ω-scans show a weak mosaicity (full-width-athalf-maximum equal to 0.36° and 0.60° for x = 0.5 and x = 0.7, respectively). In addition to this texture, the in-plane ordering evidenced by X-ray diffraction φ-scan for the (100) orientation is in agreement with an epitaxial-like growth in spite of the high lattice mismatch between K x Na 1-x NbO 3 and sapphire. The dielectric characteristics and the frequency tunability at microwave frequencies were obtained from coplanar waveguide devices (transmission lines and stub resonators). For the K 0.5 Na 0.5 NbO 3 and K 0.7 Na 0.3 NbO 3 compositions, high dielectric permittivity ε r values of 360 and 1 250, and loss tangent tanδ values of 0.36 and 0.43 without biasing were retrieved from the transmission lines measurements at 10 GHz, respectively. Frequency tunabilities of 15 % and 12 % have been assessed under 80 kV/cm biasing from stub resonator measurements for the K 0.5 Na 0.5 NbO 3 and K 0.7 Na 0.3 NbO 3 compositions, respectively. K 0.5 Na 0.5 NbO 3 composition is therefore a promising solution for miniaturized tunable devices at microwave frequencies.

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Loss Reduction Technique in Ferroelectric Tunable Devices by Laser Microetching. Application to a CPW Stub Resonator in <inline-formula> <tex-math notation="LaTeX">$X$ </tex-math> </inline-formula>-Band

Cited by 4 publications

References 29 publications

Enhanced tunability and temperature-dependent dielectric characteristics at microwaves of K0.5Na0.5NbO3 thin films epitaxially grown on (100)MgO substrates

Enhanced tunability and temperature-dependent dielectric characteristics at microwaves of K0.5Na0.5NbO3 thin films epitaxially grown on (100)MgO substrates

A Twofold Approach in Loss Reduction of KTa_0.5Nb_0.5O₃ Ferroelectric Layers for Low-Loss Tunable Devices at Microwaves

K x Na1−xNbO3 perovskite thin films grown by pulsed laser deposition on R-plane sapphire for tunable microwave devices

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Loss Reduction Technique in Ferroelectric Tunable Devices by Laser Microetching. Application to a CPW Stub Resonator in <inline-formula> <tex-math notation="LaTeX">$X$ </tex-math> </inline-formula>-Band

Cited by 4 publications

References 29 publications

Enhanced tunability and temperature-dependent dielectric characteristics at microwaves of K0.5Na0.5NbO3 thin films epitaxially grown on (100)MgO substrates

Enhanced tunability and temperature-dependent dielectric characteristics at microwaves of K0.5Na0.5NbO3 thin films epitaxially grown on (100)MgO substrates

A Twofold Approach in Loss Reduction of KTa0.5Nb0.5O3 Ferroelectric Layers for Low-Loss Tunable Devices at Microwaves

K x Na1−xNbO3 perovskite thin films grown by pulsed laser deposition on R-plane sapphire for tunable microwave devices

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A Twofold Approach in Loss Reduction of KTa_0.5Nb_0.5O₃ Ferroelectric Layers for Low-Loss Tunable Devices at Microwaves