Losses evaluation of two-level and three-level PFC topologies based on semiconductor measurements

Vermulst, Bas; Duarte, J.L.

doi:10.1109/ecce-asia.2013.6579271

Cited by 3 publications

(1 citation statement)

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“…This approach is independent of the employed modulation scheme and duty cycle, but the detection of the rising edge angle α k of the occurring square waves is rather complicated. Another method is based on actual measurements of the semiconductor losses [8]. To do so, a clamped inductive load test is suggested to measure the switching power losses while a boost converter is used to measure the conduction losses in this converter topology.…”

Section: Introductionmentioning

confidence: 99%

Instantaneous conduction and switching losses in two-level voltage source inverters

Fakharmanesh

Hackl

Perini

2017

2017 IEEE International Conference on Environment and Electrical Engineering and 2017 IEEE Industrial and Commercial Power Syst

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Abstract-A mathematical model is derived which allows to compute instantaneously the conduction and switching losses in two-level voltage source inverters (2L-VSIs) regardless of the employed modulation scheme. The model is based on the use of switching vectors applied to the considered VSI, taking into account the instantaneous conduction and switching losses of the semiconductor devices. The advantages of this method are, (i) it can be extended to any type of VSI and any modulation scheme, (ii) it can be applied to analyze the power losses of VSIs during any desired period, and (iii) it can be easily implemented in any kind of the simulation software (e.g. Matlab/Simulink).

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Section: Introductionmentioning

confidence: 99%