Love Waves in a Piezoelectric Semiconductor Thin Film on an Elastic Dielectric Half-Space

Tian, Ruixue; Nie, Guoquan; Liu, Jinxi; Pan, Ernian; Wang, Yue-Sheng

doi:10.1007/s10338-022-00364-x

Cited by 12 publications

(1 citation statement)

References 37 publications

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“…Piezoelectric semiconductor (PSC) devices, such as elemental crystal selenium, tellurium, doped BaTiO3, and some lead series piezoelectric ceramics, have been favored by researchers because of their combined piezoelectric and semiconductor characteristics [1,2]. Due to the development of epitaxial single crystal layer transducers and thin-film transducers, PSCs, such as zinc oxide (ZnO), cadmium sulfide (CdS), and other compounds, can use vacuum evaporation or sputtering technology to form very thin coatings [3][4][5][6][7]. However, these structures inevitably produce cracks and other defects inside the coating or at the interface junction during the manufacturing process, which will reduce the reliability of the device and shorten the service life of the device under the action of loads [8].…”

Section: Introductionmentioning

confidence: 99%

Analysis of an Interface Crack between Piezoelectric Semiconductor Coating and Elastic Substrate Structure

Tian,

Zhang,

et al. 2024

Mathematics

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Piezoelectric semiconductor materials possess a unique combination of piezoelectric and semiconductor effects, exhibiting multifaceted coupling properties such as electromechanical, acoustic, photoelectric, photovoltaic, thermal, and thermoelectric capabilities. This study delves into the anti-plane mechanical model of an interface crack between a strip of piezoelectric semiconductor material and an elastic material. By introducing two boundary conditions, the mixed boundary value problem is reformulated into a set of singular integral equations with a Cauchy kernel. The details of carrier concentration, current density, and electric displacement near the crack are provided in a numerical analysis. The findings reveal that the distribution of the current density, carrier concentration, and electric displacement is intricately influenced by the doping concentration of the piezoelectric semiconductor. Moreover, the presence of mechanical and electric loads can either expedite or decelerate the growth of the crack, highlighting the pivotal role of external stimuli in influencing material behavior.

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