2009 16th IEEE International Conference on Electronics, Circuits and Systems - (ICECS 2009) 2009
DOI: 10.1109/icecs.2009.5410976
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Low actuation voltage silicon carbide RF switches for MEMS above IC

Abstract: This paper presents a CMOS-compatible RF MEMS technology to build low actuation voltage switches. SiC increases the stiffness of the switches to improve reliability and durability. A design methodology is introduced to optimize tradeoffs between important system criteria, i.e., voltage levels, signal performance and switching speed. Simulations are used to evaluate devices designed with the technology.

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Cited by 2 publications
(1 citation statement)
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“…Importantly, the die clamp structure was found to retain its mechanical integrity and avoid significant degradation throughout all of the fabrication process steps that it was exposed to, i.e. sputtering, wet etching, dry etching and temperatures up to 200 • C, allowing the successful inclusion of a humidity sensor [23], a beam resonator [24], a radio-frequency (RF) switch [25] and a suspended diaphragm (which is a critical component for MEMS microphones, pressure sensors and ultrasonic transducers), as shown in figure 5.…”
Section: Ic-compatible Mems Processmentioning
confidence: 99%
“…Importantly, the die clamp structure was found to retain its mechanical integrity and avoid significant degradation throughout all of the fabrication process steps that it was exposed to, i.e. sputtering, wet etching, dry etching and temperatures up to 200 • C, allowing the successful inclusion of a humidity sensor [23], a beam resonator [24], a radio-frequency (RF) switch [25] and a suspended diaphragm (which is a critical component for MEMS microphones, pressure sensors and ultrasonic transducers), as shown in figure 5.…”
Section: Ic-compatible Mems Processmentioning
confidence: 99%