2022
DOI: 10.1016/j.jcrysgro.2022.126715
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Low areal densities of InAs quantum dots on GaAs(1 0 0) prepared by molecular beam epitaxy

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Cited by 3 publications
(2 citation statements)
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“…Self-assembled quantum dots (QDs) have attracted great interest due to their applications in various optoelectronic devices 1 . The so-called Stranski-Krastanow (SK) mode in molecular beam epitaxy (MBE) is widely used for growing these high-quality QDs 2 .…”
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confidence: 99%
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“…Self-assembled quantum dots (QDs) have attracted great interest due to their applications in various optoelectronic devices 1 . The so-called Stranski-Krastanow (SK) mode in molecular beam epitaxy (MBE) is widely used for growing these high-quality QDs 2 .…”
mentioning
confidence: 99%
“…The so-called Stranski-Krastanow (SK) mode in molecular beam epitaxy (MBE) is widely used for growing these high-quality QDs 2 . For specific applications, such as QD lasers, high QD densities are required; while lowdensity QDs are necessary for other applications, such as single photon sources 1 . However, the outcomes of any QD growth process are a complex function of a large number of variables including the substrate temperature, III/V ratio, and growth rate, etc.…”
mentioning
confidence: 99%