2011
DOI: 10.1063/1.3537926
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Low aspect ratio micron size tunnel magnetoresistance sensors with permanent magnet biasing integrated in the top lead

Abstract: Optimized single magnetic bead detection requires magnetic sensors with an improved field detection limit and a sensor area matching the bead cross section (micron size spatial resolution). This work shows that square micron sized tunnel magnetoresistance sensors can be fabricated with integrated longitudinal permanent magnet (PM) biasing that show a linearized field response and low noise. PMs (Co66Cr16Pt18) were integrated in the top lead of an AlOx based magnetic tunnel junction sensor for transfer curve li… Show more

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Cited by 33 publications
(20 citation statements)
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“…On the other hand, the adoption of single MTJ sensors with an increased A allows a lower noise level according to (1). However, increasing A requires the use of linearization strategies, such as permanent magnets (PMs) [11] or the use of a soft pinned sensing layer [12], [13]. The main advantage of a single sensor is the possibility to introduce magnetic flux guides (MFGs) to increase the sensor sensitivity, yielding a detectivity improvement.…”
Section: Introductionmentioning
confidence: 99%
“…On the other hand, the adoption of single MTJ sensors with an increased A allows a lower noise level according to (1). However, increasing A requires the use of linearization strategies, such as permanent magnets (PMs) [11] or the use of a soft pinned sensing layer [12], [13]. The main advantage of a single sensor is the possibility to introduce magnetic flux guides (MFGs) to increase the sensor sensitivity, yielding a detectivity improvement.…”
Section: Introductionmentioning
confidence: 99%
“…However, increasing the width of the sensor above a few microns results in a strong decrease of the demagnetizing field which soon becomes too weak to be noticeable and shape anisotropy alone can no longer provide linear transfer curves [8], [9]. In this range, the linearization of the sensors relies on methods such as the inclusion of permanent magnets in the vicinity of the magnetic tunnel junction (MTJ) pillars to provide an orthogonal biasing field [10], [11] or the use of thin CoFeB layers [12] . Here W, X, Y and Z represent thicknesses which can be changed in order to tune the linear range of the final devices.…”
Section: Introductionmentioning
confidence: 99%
“…17a), avoiding an extra lithography step. This strategy was successfully validated in reference [78]. To ensure the best field uniformity, dimensions should be considerably larger than the sensing layer size.…”
Section: -P9mentioning
confidence: 99%
“…external magnetic field biasing created on-chip (e.g., using integrated permanent magnets or current line) [77,78] (Fig. 12c, Sect.…”
Section: -P7mentioning
confidence: 99%