Low-breakdown-voltage solar cells for shading-tolerant photovoltaic modules

Calcabrini, Andres; Procel, Paul; Huang, Ben; Kambhampati, Viswambher; Manganiello, Patrizio; Muttillo, Mirco; Zeman, Miro; Isabella, Olindo

doi:10.1016/j.xcrp.2022.101155

Cited by 9 publications

(1 citation statement)

References 46 publications

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“…If proved successful, these low breakdown voltages can make external bypass diodes obsolete and pave the way to cheaper alternative thin‐film designs. [ 38 ]…”

Section: Fdm Validationmentioning

confidence: 99%

A 2D Simulation‐Assisted Investigation of a Low Breakdown Voltage Module

Sala,

Vishwanathreddy,

Tutundzic

et al. 2024

Solar RRL

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Upscaling perovskites modules from laboratory to market specifications requires modules to resist heat, humidity, and partial shading. When a device is partially covered or damaged, the unbalanced photocurrent generated can create an irreversible damage. Mitigation via bypass diodes can be expensive. This might not be necessary for perovskite‐based modules. After an initial validation of the finite difference model for a simulation‐assisted investigation, a module is systematically damaged and characterized to reproduce an unbalanced photocurrent generation. The device shows a breakdown voltage (< 1 V), which is unexpectedly much lower than for a standalone perovskite cell (≈7 V). The effect is reproducible over time, and it demonstrates that in a reverse bias scenario, electricity can tunnel through the monolithic interconnection (P1P2P3) and operate similar to a low‐voltage bypass diode. Eventually, the current and voltage distribution via electroluminescence is mapped to validate the 2D simulations and reproduce the device behavior at different loads.

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“…If proved successful, these low breakdown voltages can make external bypass diodes obsolete and pave the way to cheaper alternative thin‐film designs. [ 38 ]…”

Section: Fdm Validationmentioning

confidence: 99%

A 2D Simulation‐Assisted Investigation of a Low Breakdown Voltage Module

Sala,

Vishwanathreddy,

Tutundzic

et al. 2024

Solar RRL

View full text Add to dashboard Cite

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Silicon / Perovskite Tandem Solar Cells with Reverse Bias Stability down to −40 V. Unveiling the Role of Electrical and Optical Design

Di Girolamo,

Dupré,

Giuliano

et al. 2024

Advanced Science

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The reverse bias stability is a key concern for the commercialization and reliability of halide perovskite photovoltaics. Here, the robustness of perovskite‐silicon tandem solar cells to reverse bias electrical degradation down to −40 V is investigated. The two‐terminal tandem configuration, with the perovskite coupled to silicon, can improve the solar cell resistance to severe negative voltages when the tandem device is properly designed. While perovskite cells typically exhibit early reverse bias breakdown voltages, the serial connection with silicon cells with large shunt resistances and high voltage breakdown limits their negative polarization and prevent the passage of large current densities when reverse biased. The importance of careful optical design is illustrated, with bottom‐limited conditions required to prevent the perovskite top cell from exploring its own breakdown. This aspect is of great importance in the case of partial shading events when the solar spectrum is richer in the IR components than the standard AM1.5G. Notably, 100% of efficiency retained after polarization at −40 V in different stressing conditions is observed. The results presented suggest that standard industrial bypass diode schemes may be compatible with silicon/perovskite tandem photovoltaics and provide new guidelines for the standardization of the stressing protocols.

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Understanding Localized Current Leakage in Silicon‐Based Heterojunction Solar Cells

Tang,

Lin,

Wang

et al. 2024

Progress in Photovoltaics

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Current leakage through localized stacked structures, comprising opposite types of carrier‐selective transport layers, is a prevalent issue in silicon‐based heterojunction solar cells. Nevertheless, the behavior of this leakage region remains unclear, leading to a lack of guidance for structural design, material selection and process sequence control, thereby causing fluctuations of device performance. This study elucidates current‐voltage characteristics, influential factors, and underlying carrier transport mechanism of the leakage region with different stacking sequences and explores their impact on various configurations of solar cells. Characteristics of the leakage region resembling Esaki diodes or reverse diodes are revealed, along with the bias conditions of the leakage region at different locations across the solar cell. The findings suggest that modulating the behavior of the leakage region is feasible for improving device performance or serving specific purposes. This work provides guidance for the design and assessment of current leakage in the edge region of front and back contact cells, in the gap region of conventional back‐contacted cells, as well as in the tunneling region of tunneling back‐contacted cells and tandem cells.

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Low-breakdown-voltage solar cells for shading-tolerant photovoltaic modules

Cited by 9 publications

References 46 publications

A 2D Simulation‐Assisted Investigation of a Low Breakdown Voltage Module

A 2D Simulation‐Assisted Investigation of a Low Breakdown Voltage Module

Silicon / Perovskite Tandem Solar Cells with Reverse Bias Stability down to −40 V. Unveiling the Role of Electrical and Optical Design

Understanding Localized Current Leakage in Silicon‐Based Heterojunction Solar Cells

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