Low-cost 38 and 77 GHz CPW MMICs using ion-implanted GaAs MESFETs

Caruth, D.; Shimon, R.; Heins, M.S.; Hsia, H.; Tang, Zhuang; Shen, Shyh‐Chiang; Becher, D.; Huang, JianJang; Feng, Milton

doi:10.1109/mwsym.2000.863524

Cited by 3 publications

(1 citation statement)

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“…Monolithic microwave integrated circuits (MMICs) based on ion implanted GaAs field effect transistors with a Schottky barrier gate (MESFETs) are applied in telecommunication systems, wireless communication equipment, and ground based and on board radars [1][2][3][4]. One of the cutting edge tech niques enabling one to obtain MESFETs with high per formance is the technique of self aligned device ele ments, particularly, self aligned gate and source and drain contact regions of the transistor [5][6][7][8][9][10][11][12][13][14][15][16][17].…”

Section: Introductionmentioning

confidence: 99%

Formation of a submicron GaAs MESFET gate using a four-layer dielectric dummy gate

et al. 2012

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In the present study, a technology for the formation of a submicron GaAs MESFET gate of 0.5-0.1 µm in length and above 0.5 µm in height using a four layer dielectric dummy gate was developed. Tech niques of chemical and plasma chemical deposition from a gaseous phase, differing in etch rates in a buffer solution of hydrofluoric acid, were used to prepare silicon oxide films. Different constructions of a multilayer structure with varying sequences of layers and thicknesses were studied. The conditions of chemical and plasma chemical etching of dielectrics allowing a dummy double T gate to be formed were determined. The employment of a sophisticatedly shaped dummy gate made it possible to obtain a gate electrode of a large cross section with a low length. The possibility in principle to fabricate a MESFET gate with a length of up to Lg = 0.1 µm using lithographic procedures with a minimal resolution of 1.0 µm was demonstrated.

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Section: Introductionmentioning

confidence: 99%

Formation of a submicron GaAs MESFET gate using a four-layer dielectric dummy gate

et al. 2012

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RF/microwave transistors: evolution, current status, and future trend

Liou

Schwierz

Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat. No.02TH8616)

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Most applications for radio frequencyimicrowave (thereafter called RF) transistors had been military oriented in the early 1980s. Recently, this has been changed drastically due to the explosive growth of the markets for civil wireless communication systems. This paper gives an overview on the evolution, current status, and future trend of transistors used in RF electronic systems. Important background, development and major milestones leading to modem RF transistors are presented. The concept of heterostructure, a feature frequently used in RF transistors, is discussed. The different transistor types and their figures of merit are then addressed. Finally an outlook of expected future developments and applications of RF transistors is given.

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