Low-cost amorphous silicon photovoltaic module encapsulated with liquid resin

Kondô, Mitsuo; Takenaka, Atsushi; Ishikawa, Akira; Kurata, Shoji; Hayashi, Kozaburo; Nishio, H.; Nishimura, Kunio; Yamagishi, H.; Tawada, T.

doi:10.1016/s0927-0248(97)00186-4

Cited by 10 publications

(8 citation statements)

References 1 publication

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“…However, of c-Si and poly-Si solar cells seriously decreases with an increase in the operating temperature, while hydrogenated amorphous Si (a-Si:H)-based thin-film solar cells exhibit relatively small variation in . [4][5][6][7] The main reason for the lower temperature coefficient (TC) of a-Si:H-based solar cells is their wide-band-gap intrinsic absorber or high V oc compared with those of bulk crystalline Si-solar cells. Taking the real output power affected by the operating temperature and production cost into account, a-Si:H-based thin-film solar cells have advantages over bulk crystalline-Si solar cells for use in high temperature areas such as a tropical region.…”

Section: Introductionmentioning

confidence: 99%

Temperature Dependence of Si-Based Thin-Film Solar Cells Fabricated on Amorphous to Microcrystalline Silicon Transition Phase

Sriprapha

Yunaz

Myong

et al. 2007

jjap

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The temperature dependence of silicon (Si)-based thin-film single-junction solar cells, whose intrinsic absorbers were fabricated on the transition phase between hydrogenated amorphous silicon (a-Si:H) to hydrogenated microcrystalline silicon (mc-Si:H), was investigated. By varying the hydrogen dilution ratio, wide-band-gap protocrystalline silicon (pc-Si:H) and mc-Si:H absorber layers were obtained. Photo-current density-voltage (Photo-J-V) characteristics were measured under AM1.5 illumination at ambient temperatures in the range of 25 -75 C. We found that the solar cells with pc-Si:H, which exists just below the a-Si:H to mc-Si:H transition boundary, showed the lowest temperature coefficient (TC) for conversion efficiency () and open-circuit voltage (V oc ), while the solar cells fabricated at the onset of the a-Si:H to mc-Si:H phase transition exhibited a relatively high TC for and V oc . Experimental results indicated that pc-Si:H is a promising material for the absorber layer of the single junction or the top cell of tandem solar cells that operate in high temperature regions.

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Section: Introductionmentioning

confidence: 99%

Temperature Dependence of Si-Based Thin-Film Solar Cells Fabricated on Amorphous to Microcrystalline Silicon Transition Phase

Sriprapha

Yunaz

Myong

et al. 2007

jjap

View full text Add to dashboard Cite

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“…In the case of monocrystalline cells, the V oc decreases in line with the J sc with increases in temperature . This behavior is also observed in amorphous silicon thin‐film solar cells, whereas in the case of DSSCs, the V oc decreases and the J sc increases as the temperature rises . This results in DSSCs being less efficient at higher temperatures and, consequently, it is important to determine the temperature reached by the active layer of the photovoltaic device.…”

Section: Introductionmentioning

confidence: 79%

A Study of Overheating of Thermostatically Controlled TiO₂ Thin Films by Using Raman Spectroscopy

et al. 2015

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In this study a classic Raman spectroscopy method is applied and the intensity ratio of Stokes and anti-Stokes peaks is used to measure the temperature of thermostatically controlled TiO2 thin films. In addition, three mathematical formulae are used and analyzed to estimate the temperature of the TiO2 thin films. Overheating of the samples above the thermostatically controlled temperature was observed while recording the Raman spectra, with a temperature increase of up to 30 K being detected. DFT-periodic calculations showed that the anatase (101) surface had a smaller band gap than bulk anatase. Thus, it can absorb the laser radiation with a wavelength of 532 nm that is used in the experimental setup. Part of the absorbed photon energy transfers into phonon energy, heating up the anatase phase, thus leading to the heating of the samples. Moreover, overheating of the samples indicates that the experimental method used in this study can lead to deviations in their real absolute temperature values.

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“…We improved the uniformity of the cell performance by optimizing the deposition conditions and increased the effective cell area by decreasing the lost area for electrical integration via laser processing. Through this optimization process, the highest initial module efficiency of 10.6% was obtained with an I sc of 1.26 A, V oc of 42.5 V, FF of 73% and P max of 39.1 W in 1995 [8].…”

Section: Valence Electron Control Of A-sic:h and Its Application To Smentioning

confidence: 99%

Introduction of the a-SiC:H/a-Si:H heterojunction solar cell and update on thin film Si:H solar modules

Tawada

2009

Philosophical Magazine

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Low-cost amorphous silicon photovoltaic module encapsulated with liquid resin

Cited by 10 publications

References 1 publication

Temperature Dependence of Si-Based Thin-Film Solar Cells Fabricated on Amorphous to Microcrystalline Silicon Transition Phase

Temperature Dependence of Si-Based Thin-Film Solar Cells Fabricated on Amorphous to Microcrystalline Silicon Transition Phase

A Study of Overheating of Thermostatically Controlled TiO₂ Thin Films by Using Raman Spectroscopy

Introduction of the a-SiC:H/a-Si:H heterojunction solar cell and update on thin film Si:H solar modules

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Low-cost amorphous silicon photovoltaic module encapsulated with liquid resin

Cited by 10 publications

References 1 publication

Temperature Dependence of Si-Based Thin-Film Solar Cells Fabricated on Amorphous to Microcrystalline Silicon Transition Phase

Temperature Dependence of Si-Based Thin-Film Solar Cells Fabricated on Amorphous to Microcrystalline Silicon Transition Phase

A Study of Overheating of Thermostatically Controlled TiO2 Thin Films by Using Raman Spectroscopy

Introduction of the a-SiC:H/a-Si:H heterojunction solar cell and update on thin film Si:H solar modules

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A Study of Overheating of Thermostatically Controlled TiO₂ Thin Films by Using Raman Spectroscopy