Low-cost and high-performance 1.3-/spl mu/m AlGaInAs-InP uncooled laser diodes

Peng, Te-Chin; Huang, Y. C.; Yang, Chih-Chao; Huang, Kuo-Ying; Lee, Feng-Ming; Hu, Chih‐Wei; Wu, Meng‐Chyi; Ho, Chong-Long

doi:10.1109/lpt.2006.875524

Search citation statements

Order By: Relevance

Paper Sections

Select...

Simulation and Results Discussion1

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2008

2013

Publication Types

Select...

Article5

Relationship

Self Cite0

Independent5

Authors

Journals

Cited by 6 publications

(1 citation statement)

References 5 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…That can be use for interpreting the transparency. [24] These plots can be approximated by [15] g = g 0 ln N N tr .…”

Section: Simulation and Results Discussionmentioning

confidence: 99%

A Novel Investigation on Using Strain in Barriers of 1.3 μ m AlGaInAs-InP Uncooled Multiple Quantum Well Lasers

Yekta

Kaatuzian

2010

Commun. Theor. Phys.

View full text Add to dashboard Cite

In this study we investigate strain effect in barriers of 1.3 μm AlGaInAs-InP uncooled multiple quantum well lasers. Single effective mass and Kohn–Luttinger Hamiltonian equations have been solved to obtain quantum states and envelope wave functions in the structure. In the case of unstrained barriers, our simulations results have good agreement with a real device fabricated and presented in one of the references. Our main work is proposal of 0.2% compressive strain in the structure Barriers that causes significant reduction in Leakage current density and Auger current density characteristics in 85 °C. 20% improvement in mode gain-current density characteristic is also obtained in 85°C.

show abstract

“…That can be use for interpreting the transparency. [24] These plots can be approximated by [15] g = g 0 ln N N tr .…”

Section: Simulation and Results Discussionmentioning

confidence: 99%