Low Cost Fabrication of Si NWs/CuI Heterostructures

Abstract

In this paper, we present the realization by a low cost approach compatible with silicon technology of new nanostructures, characterized by the presence of different materials, such as copper iodide (CuI) and silicon nanowires (Si NWs). Silicon is the principal material of the microelectronics field for its low cost, easy manufacturing and market stability. In particular, Si NWs emerged in the literature as the key materials for modern nanodevices. Copper iodide is a direct wide bandgap p-type semiconductor used for several applications as a transparent hole conducting layers for dye-sensitized solar cells, light emitting diodes and for environmental purification. We demonstrated the preparation of a solid system in which Si NWs are embedded in CuI material and the structural, electrical and optical characterization is presented. These new combined Si NWs/CuI systems have strong potentiality to obtain new nanostructures characterized by different doping, that is strategic for the possibility to realize p-n junction device. Moreover, the combination of these different materials opens the route to obtain multifunction devices characterized by promising absorption, light emission, and electrical conduction.

CMOS-Compatible and Low-Cost Thin Film MACE Approach for Light-Emitting Si NWs Fabrication

“…This method is known as the silver salts approach and takes advantage of the silver nanoparticle random precipitation onto the Si surface to catalyze the etching. The average diameter of the realized NWs is usually of about 70 ± 20 nm [35,36] by using the silver salt approach. This method is fast, does not need complicated sample preparation and it is very cheap compared to lithography approaches.…”

New Hybrid Light Harvesting Antenna Based on Silicon Nanowires and Metal Dendrimers

“…A very strong impulse has been given to the realization of new Si‐based hybrid materials as light antennas for various photovoltaic applications, [ 14–19 ] luminescent sensors, [ 20–22 ] light‐emitting diodes (and in general optoelectronics applications), [ 23–28 ] and up‐conversion systems [ 29–31 ] in international research. In this modern scenario, various studies have also been carried out on the fabrication of hybrid antennas by coupling Si nc and different molecules (i.e., tetraphenylporphyrin Zn(II) chromophores, pyrene chromophores).…”

“…The recent rise of semiconductor nanowires opens new opportunities thanks to their unique 1D structure combined with remarkable electrical and optical properties. Notably, 1D materials such as Si nanowires (Si NWs) provide high aspect ratio, high exposed surface, easy electrical pumping, robustness, [ 14,46 ] and higher photoluminescence (PL) stability compared to Si nc. Nevertheless, since their optical emission has been achieved only recently, their implementation in hybrid material for light harvesting antenna has still not been explored.…”

Silicon Nanowires Synthesis by Metal-Assisted Chemical Etching: A Review

“…During these years, a lot of effort was spent on the realization of novel Field Effect Transistor (FET) based on Si NWs [ 17 , 18 , 19 ], as well as on the integration of silicon photonics in microelectronics industries [ 11 , 20 , 21 ]. Metal Oxide Semiconductors Field Effect Transistor (MOSFET) technology’s constant miniaturization for microelectronics led scientists to design new improvements based on nanomaterials, such as nanowires and nanotubes.…”