2014 International Symposium on Power Electronics, Electrical Drives, Automation and Motion 2014
DOI: 10.1109/speedam.2014.6872078
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Low-cost I-V tracer for photovoltaic modules and strings

Abstract: This paper presents new developments of a robust and low-cost instrument-less than 600 €-for monitoring and processing I-V and P-V characteristics of photovoltaic (PV) modules and high voltage strings. The characteristics can be traced on an oscilloscope or using a developed a LabVIEW application. It is a simple instrument because only fundamental electronic circuits are used. The equipment consists of a flexible configuration, developed from a previous work, based on a fast varying load based on a power MOSFE… Show more

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Cited by 13 publications
(6 citation statements)
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“…They have the advantage of being cheaper than the capacitive load for low voltages, with the limiting power that the transistors used in their design can handle, and they normally have noise in their measurement due to the transistor switching [34]. In [35], the use of a PWM control for the management of the MOSFET or an IGBT is proposed, and a structure for the galvanic isolation of the control circuit is exposed. In [36], this concept is extended, using a DAQ for the generation of a triangular signal as a control of the MOSFET.…”
Section: Electronic Load Tracermentioning
confidence: 99%
“…They have the advantage of being cheaper than the capacitive load for low voltages, with the limiting power that the transistors used in their design can handle, and they normally have noise in their measurement due to the transistor switching [34]. In [35], the use of a PWM control for the management of the MOSFET or an IGBT is proposed, and a structure for the galvanic isolation of the control circuit is exposed. In [36], this concept is extended, using a DAQ for the generation of a triangular signal as a control of the MOSFET.…”
Section: Electronic Load Tracermentioning
confidence: 99%
“…• MOSFETs exhibit a finite value of R DS(on) in the saturation region, resulting in incorrect measurement resulting in incorrect measurement near V oc [88]. • Transistors are only used for low power rating SPV module characterization since they can only hold high power for a few milliseconds as a load.…”
Section: ) Drawbacksmentioning
confidence: 99%
“…• Transistors are only used for low power rating SPV module characterization since they can only hold high power for a few milliseconds as a load. • When it comes to high power ratings, a heat sink and cooling fans are needed for safe operation [88], [89]. • Due to the non-negligible influence of the parasitic, capacitive, and inductive MOSFET parameters, measuring error occurs [90].…”
Section: ) Drawbacksmentioning
confidence: 99%
“…After investigating the most relevant loading methods [19,20,[40][41][42][43][44][45], capacitive loading approach is selected to obtain electrical curves of the SPV module which is also widely used method for all available commercial OTFs. The reactive component, similar to a capacitor, offers a low resistance path during charging, and an infinite resistance path after capacitor voltage equals the DC input voltage produced by the SPV module.…”
Section: Electrical Load Unit 231 Capacitive Loadmentioning
confidence: 99%