Low cost Pd coated Ag bonding wire for high quality FAB in air

Tanna, Suresh; Pisigan, Jairus L.; Song, Wenjing; Halmo, Christopher; Persic, John; Mayer, Michael

doi:10.1109/ectc.2012.6248973

Cited by 18 publications

(12 citation statements)

References 14 publications

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“…A common improved version of Cu alloy includes the Pd-coated Cu wire in which a thin Pd film is coated onto the bare Cu wire. This wirebond has been evaluated extensively, and reliability studies with Pd-coated Cu wirebonding showed better moisture reliability compared to bare Cu wire (Singh et al, 2012;Tanna et al, 2012;Abe et al, 2012;Cheng et al, 2012;Lin et al, 2012). Wire vendors strive to develop newer and lower cost Cu wire version such as Pd-doped Cu wire, whereby a homogenous Pd-distribution in Cu free air ball (FAB) intended to suppress corrosion and oxidation in high humidity conditions.…”

Section: Cu Wirebondingmentioning

confidence: 97%

Future and technical considerations of gold wirebonding in semiconductor packaging – a technical review

Gan¹,

Francis²,

Chan

et al. 2014

Microelectronics International

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Purpose -The purpose of this paper is to provide a systematic review on technical findings and discuss the feasibility and future of gold (Au) wirebonding in microelectronics packaging. It also aims to study and compare the cost, quality and wear-out reliability performance of Au wirebonding with respect to other wire alloys such as copper (Cu) and silver (Ag) wirebonding. This paper discusses the influence of wire type on the long-term reliability tests. Design/methodology/approach -Literature reviews are conducted based on cost and wire selections of Au, Cu or Ag wirebonding. Detailed wear-out failure findings and wire selection with cost considerations are presented in this review paper. The future and the status of Au wirebonding in microelectronics packaging are discussed in this paper. Findings -This paper briefly reviews selected aspects of the Au ball and other alternative bonding options, focusing on reliability performance, and discusses the future of Au wirebonding in the near future in semiconductor packaging. Practical implications -The paper reveals the technical considerations when choosing the wire types for future microelectronics packaging. Originality/value -The in-depth technical review and strategies of the selection of wire types (Au, Cu or the latest Ag alloy) in microelectronics packaging are discussed in this paper based on previous literature studies.

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Section: Cu Wirebondingmentioning

confidence: 97%

Future and technical considerations of gold wirebonding in semiconductor packaging – a technical review

Gan¹,

Francis²,

Chan

et al. 2014

Microelectronics International

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“…Additionally, the Ag-Al bond reliability has been evaluated [14][15][16][17][18][19]. Technologies based on Pd coatings and the addition of Ag bonding wire have been introduced, which improve the efficiency of the fabrication process and the Ag-Al bond reliability [14,15]. Annealing twinned Ag-8Au-3Pd bonding wire has been reported to improve the properties of wire and the Ag-Al bond reliability [16][17][18][19].…”

Section: Introductionmentioning

confidence: 99%

“…Recently, a variety of Ag alloys have been designed for better bonding wire and improved properties. Additionally, the Ag-Al bond reliability has been evaluated [14][15][16][17][18][19]. Technologies based on Pd coatings and the addition of Ag bonding wire have been introduced, which improve the efficiency of the fabrication process and the Ag-Al bond reliability [14,15].…”

Section: Introductionmentioning

confidence: 99%

Microstructural evaluation and failure analysis of Ag wire bonded to Al pads

Choi

Kim

Lee

et al. 2015

Microelectronics Reliability

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“…In particular, palladium coated copper wire (Pd/Cu) has been successfully introduced in mass production. Not only Pd/Cu, but also palladium coated silver wire, gold coated copper wire, insulated gold and copper wires, and other coating/wire combinations have been tried out and reported [2][3][4][5][6][7][8][9][10][11][12][13][14]. When studying several new coating/wire combinations, the need for accelerated testing methods is significant.…”

Section: Introductionmentioning

confidence: 99%

“…Recently, the use of novel materials for bonding wires has reduced the cost of wire bonding significantly [2][3][4][5][6][7][8][9]. For example, coated bonding wires are being used in large quantity for their improved bondability.…”

Section: Introductionmentioning

confidence: 99%

Reliability testing of wire bonds using pad resistance with van der Pauw method

Mayer

Kim

2014

2014 IEEE 64th Electronic Components and Technology Conference (ECTC)

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In microelectronic wire bonding, a reliable electrical connection is of utmost importance. With the advent of advanced bonding wire materials such as Cu, Pd coated Cu, and Ag alloys, there are substantial ongoing efforts in process development and reliability characterization with these materials. To measure bond quality and especially bond reliability is limited with respect to sample size and number of different conditions that can be covered with available resources. Methods that apply non-destructive bond quality measurements during thermal aging could be useful to increase characterization throughput while keeping the need for resources under control.A non-destructive pad resistance method based on the well known van der Pauw method is introduced that indicates bond aging more conveniently than previously reported bond resistance methods. With four connection lines designed at each corner of a standard square bonding pad, the pad resistance was monitored at various stages during reliability testing by high temperature storage at 250 °C of a Au ball bond ≈50 µm in diameter and ≈15 µm high on a standard Al pad. The pad resistance increased during aging up to 30.8 h due to intermetallics (IMCs) formation, then dropped ≈5 % during 14 h down to 50.1 mΩ, and then rose again to reach a plateau above 55 mΩ after 76 h that remain unchanged for the remainder of the aging which lasted 150 h.To explain the unexpected resistance drop a number of finite element (FE) models was developed to simulate various IMC distributions in the bond zone and their effect on the pad resistance. It was found that the resistance drop can be explained by the occurrence of Al-rich IMCs at the periphery of the bond in later stages of bond aging. Compared to the earlier Au-rich IMCs, Al-rich IMCs have lower resistivity. Therefore, the time of the pad resistance drop can indicate the beginning of a late stage of bond deterioration of the Au/Al system and effectively serve as a non-destructive reliability indicator.

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Low cost Pd coated Ag bonding wire for high quality FAB in air

Cited by 18 publications

References 14 publications

Future and technical considerations of gold wirebonding in semiconductor packaging – a technical review

Future and technical considerations of gold wirebonding in semiconductor packaging – a technical review

Microstructural evaluation and failure analysis of Ag wire bonded to Al pads

Reliability testing of wire bonds using pad resistance with van der Pauw method

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