Low cost QFN package design for millimeter-wave applications

Lin, Yuefeng; Lin, Yu‐Chih; Horng, Tzyy‐Sheng; Hwang, Lih-Tyng; Chiu, Chi-Tsung; Hung, Chih-Pin

doi:10.1109/ectc.2012.6248944

Cited by 7 publications

(5 citation statements)

References 6 publications

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“…2(a). In [9], it was shown the second path had helped to extend the package operating frequency up to 50 GHz. This improvement was due mainly to the decrease in inductance achieved by the dual ground path.…”

Section: B Two Ground Paths In Parallelmentioning

confidence: 99%

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Full Chip-Package-Board Co-Design of Broadband QFN Bonding Transition Using Backside via and Defected Ground Structure

Lin

Lee

Horng

et al. 2014

IEEE Trans. Compon., Packag. Manufact. Technol.

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A complete chip-package-board co-design of bonding transition for a quad flat pack nonlead (QFN) package was conducted from dc to millimeter wave frequencies. First, two ground paths in parallel were used to improve the operating frequency of the commercially available QFN to 50 GHz. Owing to its rectangular cross section, ribbon bond has a better form factor than the corresponding round wire bond with the same dc resistance; it is therefore more effective in impedance matching, and can carry more current at high frequencies. Ribbon bonds were utilized to improve incrementally the frequency performance. Applying the −1.5-dB rule for |S 21 | and the −10-dB rule for |S 11 |, improvements are found to be 1.7 and 3.2 GHz, respectively. Second, QFN frequency performance was significantly improved by using an embedded DGS on the PCB. At 50 GHz, the transition was found to be excessively capacitive. A highimpedance DGS, being inductive itself, was used to compensate for the capacitive nature of the transition. The lumped element approach was taken to provide the background rationale how a DGS on the PCB ground can be adequately used to reduce the capacitive nature of the transition around 50 GHz. Indeed, from simulation at 50 GHz, utilizing the DGS helped to improve the impedance matching, and reduce the insertion loss, further extending the range of operating frequencies. Later, a full wave simulation of the DGS-compensated transition was conducted and the transition was experimentally validated. The full-wave simulated and experimentally obtained results are in good match. From measurements, when the DGS is used, the −1.5-dB rule for |S 21 | and the −10-dB rule for |S 11 | enable the QFN package to achieve the bandwidth up to 62.3 and 66 GHz, respectively. Index Terms-Broadband quad flat pack nonlead (QFN) package, compensation, defected ground structure (DGS), millimeter-wave package, ribbon bond interconnect.

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Section: B Two Ground Paths In Parallelmentioning

confidence: 99%

“…In [8], the frequency response is satisfactory only in narrow 60-GHz band applications. In our previous work [9], two ground paths in parallel to minimize the signal inductance at the IC-to-package interface to achieve broadband matching without the need for any additional matching network, but this approach only extended the operating frequency to 50 GHz.…”

mentioning

confidence: 99%

Full Chip-Package-Board Co-Design of Broadband QFN Bonding Transition Using Backside via and Defected Ground Structure

Lin

Lee

Horng

et al. 2014

IEEE Trans. Compon., Packag. Manufact. Technol.

Self Cite

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“…By adopting a package solution in which a heat dissipation gasket and a multi-layer substrate are constructed in the HTCC shell with a metal heat sink at the bottom, efficient heat dissipation, high air tightness, and excellent integration are simultaneously realized. These are the main advantages of this SIP compared with other packages [30]. This SIP is suitable for implementing the radar transceiver system and engineering applications.…”

Section: Introductionmentioning

confidence: 96%

A Ku-Band Miniaturized System-in-Package Using HTCC for Radar Transceiver Module Application

Yang

Zhang²,

Song³

2022

Micromachines

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This paper introduces a miniaturized system in package (SIP) for a Ku-band four-channel RF transceiver front-end. The SIP adopts the packaging scheme of an inner heat-dissipation gasket and multi-layer substrate in the high temperature co-fired ceramics (HTCC) shell with a metal heat sink at the bottom. The gasket effectively solves the heat-dissipation problem of high-power transceiver chips, and the multi-layer substrate achieves the interconnection between multiple chips. Within the limited size of 14.0 × 14.0 × 2.5 mm3, the SIP integrates five bidirectional amplifier chips, an amplitude-phase control multi-function chip, and two power modulation chips to realize the Ku-band four-channel RF transceiver front-end. Transmitting power over 0.5 W (27dBm) and receiving noise figure of 3.4 dB are achieved in the Ku-band. The efficient heat dissipation, high air tightness, and excellent integration are simultaneously realized in this SIP. The measurement results show that the performance is stable in the receiving and transmitting states, and the SIP based on HTCC technology has specific prospects for radar transceiver application.

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“…Additionally, for a small package, the process tolerances are more pronounced and can cause electrical performance and yield degradation (Wein 1995). The wire-bond technology has been applied for power amplifier MMIC-packaging only at module level up to kaband (Bessemoulin et al 2006;Lin et al 2012). However, increasing operation frequency imposes a challenge in MMIC performance due to inductive and coupling parasitic effects associated with the wire-bond connection.…”

Section: Introductionmentioning

confidence: 99%