Low damage dry-etched grating on a MQW active layer and dislocation-free InP regrowth for 1.55 μm complex-coupled DFB lasers fabrication

GaInAsP/InP quantum-wire lasers and distributed reflector lasers with wirelike active regions by lithography and regrowth

“…To overcome these problems, we adopted CH 4 /H 2 reactive-ion-etching (RIE) of multiple-quantum-well (MQW) structures [8] and a much slower growth rate during the growth of InP embedding layer than that used in the conventional OMVPE condition [12] , and achieved Q-Wire lasers with a lower threshold current density than that of QWire lasers fabricated by the wet chemical etching [4] .…”

“…1(e)]. First, i-InP was grown into the groove regions at 600 °C with a slow growth speed (250 nm/h) [12] . Then, an n-GaInAsP OCL layer (N D =5×10 17 cm -3 , λ g =1.2 µm, 125 nm thick, lattice-matched to InP), an n-InP cladding layer (N D =1×10 18 cm -3 , 2 µm thick) and an n + -GaInAs contact layer (N D =5×10 18 cm -3 , 50 nm thick, lattice-matched to InP) were grown at 650 °C with a growth speed of 1.2 µm/h.…”

The effects of the transducer beam properties on the ultrasonic geometrical characterization of periodically corrugated surfaces

“…Periodically corrugated structures are ubiquitous; they appear in everyday life as well as in sophisticated technological applications from large-scale architectural structures [1][2] to small-scale photonic or phonic crystals [3]. Generally the geometry of the corrugated structures is crucial for the designed functionality and therefore nondestructive characterization is of great interest during design as well as during the manufacturing process.…”

GaInAsP/InP Quantum Wire Lasers

“…These lasers were fabricated by electrocyclotron resonance-enhanced reactive ion-beam etching (ECR-RIBE) using a CCl 2 F 2 /Ar gas mixture [67] and wet chemical etching followed by OMVPE regrowth. In addition, by applying CH 4 /H 2 reactive ion etching (RIE) to multiple QW (MQW) structures [68] and a much slower growth rate during the embedding growth of an InP layer than that used in conventional OMVPE growth [69], Q-wire lasers with lower threshold current density than that fabricated by wet chemical etching were obtained [59].…”

“…• C at a slow growth speed (250 nm/h) [69]. Then, an n-GaInAsP OCL layer, an n-InP cladding layer, and an n+-GaInAs contact layer were grown at 650…”