Conference Proceedings. 1997 International Conference on Indium Phosphide and Related Materials
DOI: 10.1109/iciprm.1997.600232
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Low damage reactive ion etching process for fabrication of ridge waveguide lasers

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Cited by 3 publications
(3 citation statements)
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“…These results represent preliminary progress. due to electric fields set up by the creation of surface states Nevertleless, we have been successful in being able to duing RT:E [10]. The second peak in Fig.…”
Section: A Calibration T8mentioning
confidence: 91%
“…These results represent preliminary progress. due to electric fields set up by the creation of surface states Nevertleless, we have been successful in being able to duing RT:E [10]. The second peak in Fig.…”
Section: A Calibration T8mentioning
confidence: 91%
“…Given the low density of the sample (~1 QD/µm 2 ) it is unlikely that the peak observed after the RIE is from another dot. The likely mechanism for the red-shift is an electric field arising from surface states or defects, which are formed as a result of RIE and plasma ashing [5].…”
Section: Qd Registrationmentioning
confidence: 99%
“…Given the low density of the sample (∼1 QD μm −2 ) it is unlikely that the peak observed after the RIE is from another dot which suggests that this is a sampleprocessing issue. A likely explanation could be that surface states are created during the RIE dry etch leading to the set up of electric fields which induce Stark shifts to the QD exciton energy [13]. The second peak in figure 5(b) is attributed to the QD biexciton (XX) transition due to its characteristic PL intensity dependence with excitation power.…”
Section: Qd Reacquisitionmentioning
confidence: 99%