2010
DOI: 10.1063/1.3497277
|View full text |Cite
|
Sign up to set email alerts
|

Low damping resonant magnetoelectric sensors

Abstract: The signal of magnetic sensors based on resonant cantilevers comprised of elastically coupled piezoelectric and magnetostrictive materials increases as the damping decreases. Here, we demonstrate that air damping which normally is suppressed by evacuation can also be substantially reduced by lowering the resonance frequency. We show that a Si-cantilever structured to include a seismic mass features a resonant magnetoelectric coupling coefficient of 1.8 kV/cmOe at 330 Hz in air

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
2

Citation Types

1
39
0

Year Published

2012
2012
2024
2024

Publication Types

Select...
5
1
1

Relationship

0
7

Authors

Journals

citations
Cited by 82 publications
(40 citation statements)
references
References 13 publications
1
39
0
Order By: Relevance
“…The maximum ME coupling interaction has been achieved in multiferroic heterostructures with alternate ferroelectric/ferromagnetic layers. 3,4 Multiferroic material Bismuth Ferrite (BFO) exhibits simultaneous existence of room temperature antiferromagnetism (T N ¼ 643 K) and ferroelectricity (T C ¼ 1103 K). 5 It has been very well explored that solid solutions of BFO with ferroelectric perovskite material BaTiO 3 (BTO) result in improved ferroelectric and magnetic properties.…”
mentioning
confidence: 99%
“…The maximum ME coupling interaction has been achieved in multiferroic heterostructures with alternate ferroelectric/ferromagnetic layers. 3,4 Multiferroic material Bismuth Ferrite (BFO) exhibits simultaneous existence of room temperature antiferromagnetism (T N ¼ 643 K) and ferroelectricity (T C ¼ 1103 K). 5 It has been very well explored that solid solutions of BFO with ferroelectric perovskite material BaTiO 3 (BTO) result in improved ferroelectric and magnetic properties.…”
mentioning
confidence: 99%
“…In all calculations the FeCoBSi-AlN-Si system is used, which has been extensively investigated experimentally. [10][11][12]39 If the stoichiometry of the amorphous MS-phase is kept constant, thickness independent piezomagnetic properties are expected down to 2 nm, where magnetic interface effects set in. 40 The piezoelectric coefficients of hexagonal wurtzite structure AlN layers were found to decrease below about 500 nm layer thickness.…”
Section: Resultsmentioning
confidence: 99%
“…We focus on device structure and geometry dependent magnetoelectric effects in an effort to separate them from thin film material properties, which may advance with processing techniques. As , β 33 = 1.2710 10 V m As , ρ = 3268 kg m 3 ), 10,11,42 and Si as the substrate material (s s = 5.8810 −12 Pa −1 , ρ = 2328 kg m 3 ). Please note that although the results presented below were calculated for 5 μm thick ME nanocomposites and substrates up to 20 μm.…”
Section: Resultsmentioning
confidence: 99%
See 2 more Smart Citations