Low dark current quantum-dot infrared photodetectors with an AlGaAs current blocking layer

Wang, Shiang‐Yu; Lin, Sheng-Di; Wu, H. W.; Lee, C. P.

doi:10.1063/1.1347006

Cited by 109 publications

(45 citation statements)

References 8 publications

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“…However, they cannot, so far, compete in performance with their photodiode counterpart. 4 With that goal, big efforts are being made for achieving increased responsivities and lower dark currents [14][15][16] . The difficulty of this task lies in the dependency of both parameters with the applied voltage in voltage-driven photodetectors.…”

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confidence: 99%

Optically Triggered Infrared Photodetector

et al. 2014

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We demonstrate a new class of semiconductor device: the Optically Triggered Infrared Photodetector (OTIP). This photodetector is based on a new physical principle that allows the detection of infrared light to be switched ON and OFF by means of an external light. Our experimental device, fabricated using InAs/AlGaAs quantum-dot technology, demonstrates normal incidence infrared detection in the 2-6 μm range. The detection is optically triggered by a 590-nm light-emitting diode. Furthermore, the detection gain is achieved in our device without

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confidence: 99%

Optically Triggered Infrared Photodetector

et al. 2014

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“…In the injector-DWELL a 5 nm thin GaAs-QW (QW1) is placed below the QD1-layer. The WL of the QD1-layer is covered by a 1 nm thin Al 0.42 Ga 0.58 As-layer [26].…”

Section: Device Simulationmentioning

confidence: 99%

“…This QW ensures that electrons are efficiently captured by the injector-DWELL. Barrier B covers the WL of the QD1-layer (WL1) and supports the capture of darkcurrent electrons [26].…”

Section: Theory and General Device Structurementioning

confidence: 99%

Injector Quantum Dot Molecule Infrared Photodetector: A Concept for Efficient Carrier Injection

Gebhard

2011

Nano-Micro Lett.

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Quantum dot infrared photodetectors are expected to be a competitive technology at high operation temperatures in the long and very long wavelength infrared spectral range. Despite the fact that they already achieved notable success, the performance suffers from the thermionic emission of electrons from the quantum dots at elevated temperatures resulting in a decreasing responsivity. In order to provide an efficient carrier injection at high temperatures, quantum dot infrared photodetectors can be separated into two parts: an injection part and a detection part, so that each part can be separately optimized. In order to integrate such functionality into a device, a new class of quantum dot infrared photodetectors using quantum dot molecules will be introduced. In addition to a general discussion simulation results suggest a possibility to realize such a device.

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“…The mesa height can vary from 1 to 4 µm depending on the device heterostructure. The quantum dots are directly doped (usually with silicon) in order to provide free carriers during photoexcitation, and an AlGaAs barrier can be included in the vertical device heterostructure in order to block dark current created by thermionic emission [82,83].…”

Section: Anticipated Advantages Of Qdipsmentioning

confidence: 99%

New material systems for third generation infrared photodetectors

Rogalski¹

2008

Opto-Electronics Review

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Third-generation infrared (IR) systems are being developed nowadays. In the common understanding, these systems provide enhanced capabilities-like larger numbers of pixels, higher frame rates, and better thermal resolution as well as multicolour functionality and other on-chip functions. In this class of detectors, two main competitors, HgCdTe photodiodes and quantum-well photoconductors, have being developed.Recently, two new material systems have been emerged as the candidates for third generation IR detectors, type II InAs/GaInSb strain layer superlattices (SLSs) and quantum dot IR photodetectors (QDIPs).In the paper, issue associated with the development and exploitation of multispectral photodetectors from these new materials is discussed. Discussions is focused on most recently on-going detector technology efforts in fabrication both photodetectors and focal plane arrays (FPAs). The challenges facing multicolour devices concerning complicated device structures, multilayer material growth, and device fabrication are described.

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Low dark current quantum-dot infrared photodetectors with an AlGaAs current blocking layer

Cited by 109 publications

References 8 publications

Optically Triggered Infrared Photodetector

Optically Triggered Infrared Photodetector

Injector Quantum Dot Molecule Infrared Photodetector: A Concept for Efficient Carrier Injection

New material systems for third generation infrared photodetectors

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