“…Different approaches to deposit fluorinated silicon oxide films include plasma enhanced chemical vapor deposition ͑PECVD͒, electron cyclotron resonance plasma CVD, or atmospheric pressure CVD using Si precursors such as SiF 4 , FSi͑OC 2 H 5 ͒ 3 , or Si͑OC 2 H 5 ͒ 4 in presence of NF 3 , CF 4 , N 2 O, or C 2 F 6 . [4][5][6] Here, we present results of depositing fluorinated silicon oxide at 120°C with conventional PECVD by flowing CF 4 as a fluorine source into a silicon oxide deposition process utilizing Si 2 H 6 and N 2 O precursors. The latter silicon dioxide deposition process utilizing Si 2 H 6 precursor for silicon but without fluorine has been reported in our earlier work.…”