1994
DOI: 10.1143/jjap.33.408
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Low Dielectric Constant Interlayer Using Fluorine-Doped Silicon Oxide

Abstract: A new interlayer dielectric for multilevel interconnection using fluorine doped silicon oxide (SiOF) has been developed. The film is deposited by simple technique, which is CzFo addition to conventional TEOS based PECVD. Si-F bond formation in the film is recognized by chemical bonding structural study using FT-IR and XPS. Low dielectric constant and excellent gap filling property are obtained. Therefore a high capable interlayer dielectric formation for advanced VLSI devices can be realiznd with this simple t… Show more

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Cited by 131 publications
(47 citation statements)
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“…Usami [20] reports that the interaction of F with adjacent sites makes a large space in SiO 2 , which acts as a water absorption site, and films with Si-F 2 bonds (980 cm -1 ) tend to absorb more water than films with only Si-F bonds. According to this viewpoint,…”
Section: Accepted Manuscriptmentioning
confidence: 99%
“…Usami [20] reports that the interaction of F with adjacent sites makes a large space in SiO 2 , which acts as a water absorption site, and films with Si-F 2 bonds (980 cm -1 ) tend to absorb more water than films with only Si-F bonds. According to this viewpoint,…”
Section: Accepted Manuscriptmentioning
confidence: 99%
“…Different approaches to deposit fluorinated silicon oxide films include plasma enhanced chemical vapor deposition ͑PECVD͒, electron cyclotron resonance plasma CVD, or atmospheric pressure CVD using Si precursors such as SiF 4 , FSi͑OC 2 H 5 ͒ 3 , or Si͑OC 2 H 5 ͒ 4 in presence of NF 3 , CF 4 , N 2 O, or C 2 F 6 . [4][5][6] Here, we present results of depositing fluorinated silicon oxide at 120°C with conventional PECVD by flowing CF 4 as a fluorine source into a silicon oxide deposition process utilizing Si 2 H 6 and N 2 O precursors. The latter silicon dioxide deposition process utilizing Si 2 H 6 precursor for silicon but without fluorine has been reported in our earlier work.…”
Section: Brief Reports and Commentsmentioning
confidence: 99%
“…SiOC(-H) films have attracted much attention in various industrial fields such as dielectrics in semiconductor technology or mechanical application or food packaging because of prominent properties including hardness [2], low-k [3], electronic applications [4], gas barrier properties [5] and optical transparency [6]. In recent research, silica based films which have led to improvements in the properties noted above, have also been studied for potential applications as coatings on polymeric materials.…”
Section: Introductionmentioning
confidence: 99%