Low dielectric fluorinated amorphous carbon thin films grown from C6F6 and Ar plasma

Yi, Jeong W.; Lee, Young Ho; Farouk, Bakhtier

doi:10.1016/s0040-6090(00)01021-x

Cited by 58 publications

(34 citation statements)

References 24 publications

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“…A similar result has been reported on the effect of annealing temperature on the chemi- 1198 Jin, Ajmera, Lee, and Singh cal structures of fluorinated-diamond-like carbon (F-DLC) films. 29 The shrinkage rates for films in Fig. 8 were high ϳ5.6% for the case shown in Fig.…”

Section: Film Thickness Shrinkagementioning

confidence: 88%

Ultralow-k silicon containing fluorocarbon films prepared by plasma-enhanced chemical vapor deposition

Jin

Ajmera

Lee

et al. 2005

Journal of Elec Materi

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Low dielectric constant materials as interlayer dielectrics (ILDs) offer a way to reduce the RC time delay in high-performance ultra-large-scale integration (ULSI) circuits. Fluorocarbon films containing silicon have been developed for interlayer applications below 50-nm linewidth technology. The preparation of the films was carried out by plasma-enhanced chemical vapor deposition (PECVD) using gas precursors of tetrafluorocarbon as the source of active species and disilane (5 vol.% in helium) as a reducing agent to control the ratio of F/C in the films. The basic properties of the low dielectric constant (low-k) interlayer dielectric films are studied as a function of the fabrication process parameters. The electrical, mechanical, chemical, and thermal properties were evaluated including dielectric constant, surface planarity, hardness, residual stress, chemical bond structure, and shrinkage upon heat treatments. The deposition process conditions were optimized for film thermal stability while maintaining a relative dielectric value as low as 2.0. The average breakdown field strength was 4.74 MV/cm. The optical energy gap was in the range 2.2-2.4 eV. The hardness and residual stress in the optimized processed SiCF films were, respectively, measured to be in the range 1.4-1.78 GPa and in the range 11.6-23.2 MPa of compressive stress.

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Section: Film Thickness Shrinkagementioning

confidence: 88%

Ultralow-k silicon containing fluorocarbon films prepared by plasma-enhanced chemical vapor deposition

Jin

Ajmera

Lee

et al. 2005

Journal of Elec Materi

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“…Aluminum dots were sputtered onto both sides of specimens as ohmic contact. The dielectric constant k of the films was calculated by the equation k = (C 0 t/A)/ε 0 , where ε 0 the vacuum dielectric coefficient (8.854 × 10 −14 F/cm), C 0 the measured capacitance at zero bias voltage applied, t the thickness of the DLC films and A is the area of aluminum dot [2,3]. The thickness of the DLC films was measured directly from SEM images.…”

Section: Methodsmentioning

confidence: 99%

“…The dielectric constant of a film depends mainly on the bond structure, the bond polarizability and density. Yi et al [2] showed that the increase in degree of cross-linking and densification causes an increase in the dielectric constant when the bias voltage in an a-C:F films is increased. The dielectric constants of the DLC films implanted with different ions (Ar, N 2 and C 2 H 2 ) at −40 kV bias voltage were measured.…”

Section: Dielectric Constantmentioning

confidence: 99%

“…Many materials of lower the dielectric constant have been studied to replace the SiO 2 with a dielectric constant (k) of about 4.1 [1]. These materials include the fluorinated SiO 2 , fluorinated amorphous carbon (a-C:F), fluorinated polyimide, spin-on glasses, spin-on organic films, xerogels, areogels, and phase-separated materials [2,3]. The purpose of proceeding study is to develop the materials of dielectric constant less than 3.0 and exploit the process for volume production.…”

Section: Introductionmentioning

confidence: 99%

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Electrical and mechanical properties of DLC coatings modified by plasma immersion ion implantation

Chiu

Lee

Wang

et al. 2008

Journal of Alloys and Compounds

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“…Em termos de processo de deposição, a liberação do hidrogênio da rede estrutural dos filmes de a-C:H é facilitada pelo uso de uma alta energia de bombardeamento, em virtude da ligação C-H ser mais fraca do que a ligação C-F (VIVENSANG et al, 1994), entretanto, é provável que os átomos de flúor também sejam expelidos se estiverem fracamente ligados (YI, 2000). A substituição do hidrogênio pelo flúor na estrutura molecular dos filmes de a-C:H causa um aumento na quantidade de defeitos de coordenação, porque o diâmetro atômico do flúor é maior que do hidrogênio e causa também um aumento no gap, pelo fato da energia de ligação entre C-F (5,4 eV) ser maior do que a energia de ligação entre C-C (3,6 eV) (YANG et al, 1998;.…”

Section: Processos De Incorporação De Flúor Nos Filmes A-c:hunclassified

Efeito da incorporação de flúor nas propriedades de superfície de filmes DE aC:H

Marins¹

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"Os pequenos atos que se executam são melhores que todos aqueles grandes que se planejam." George C. Marshal AGRADECIMENTOSEm primeiro lugar agradeço a Deus, pois sem Ele nada seria possível.Aos meus filhos André Luiz e Vanessa, pela compreensão, paciência e que apesar das dificuldades, sempre incentivaram meus estudos.À minha orientadora, Prof a . Drª. Elidiane Cipriano Rangel pelas valiosas discussões, paciência e confiança, para a realização deste trabalho.Ao Prof. Dr. Rogério Pinto Mota que jamais deixou de me incentivar. Sem a sua Coorientação, dedicação e auxílio, o estudo aqui apresentado seria praticamente impossível.Ao Prof. Dr. Roberto Yzumi Honda, pela amizade, pelo carinho e contribuição nos trabalhos experimentais, sem a qual seria difícil concluí-lo.Ao Sr. José Benedito Galhardo pela pronta ajuda com os equipamentos do laboratório. RESUMO Filmes finos de carbono amorfo hidrogenado (a-C:H) e fluorados (a-C:H:F)foram depositados a partir de plasmas de misturas de acetileno/argônio e acetileno/argônio/hexafluoreto de enxofre. Para a primeira mistura de gases, o plasma foi mantido por 5 e 10 minutos a uma pressão de 9,5 Pa (30% C 2 H 2 e 70% Ar) enquanto para a segunda ele foi mantido por 5 minutos utilizando-se 30% C 2 H 2 , 65%Ar e 5% SF 6 a uma pressão total de 9,5 Pa. A potência do sinal de excitação foi variada ABSTRACTHydrogenated amorphous carbon (a-C:H) and fluorinated (a-C:H:F) thin films were deposited from acetylene/argon and acetylene/argon/sulfur hexafluoride mixtures. For the first gas mixture, the plasma was kept for 5 or 10 minutes using 9.5 Pa of pressure (30% C 2 H 2 e 70% Ar) while for the second it was kept for 5 minutes using 30% C 2 H 2 , 65% Ar e 5% SF 6 at a total pressure of 9.5 Pa. The power of the excitation signal was changed from 5 to 125 W and the effect of such parameter on the properties of the films was investigated. To fluorinate the a-C:H films they were submitted, immediately after deposition and without exposure to atmosphere, to SF 6 plasma treatments. Such procedures were conducted for 5 minutes in radiofrequency (13.56MHz, 70 W) plasmas of 13.3 Pa of pressure. Raman and X-Ray photoelectron spectroscopes were employed to investigate, respectively, the microstructure and chemical composition of the films. Film hardness and friction coefficient were determined from nanoindentation and tribometry techniques, respectively. The receptivity of the samples towards water was evaluated through contact angle data and roughness was measured by optical interferometry. The a-C:H films obtained from the C 2 H 2 and Ar plasma mixtures in lower power (5 e 25 W) presented polymer-like structures and compositions while those prepared using intermediary power levels ( 50 e 75 W) presented higher proportions of tetrahedral carbon bonds and low proportions of hydrogen, suggesting a Diamond like Carbon (DLC) structure. Films deposited using the higher power (100 e 125 W) plasmas presented a graphitic structure. As the material prepared with lower power signals were submitted to the S...

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Low dielectric fluorinated amorphous carbon thin films grown from C6F6 and Ar plasma

Cited by 58 publications

References 24 publications

Ultralow-k silicon containing fluorocarbon films prepared by plasma-enhanced chemical vapor deposition

Ultralow-k silicon containing fluorocarbon films prepared by plasma-enhanced chemical vapor deposition

Electrical and mechanical properties of DLC coatings modified by plasma immersion ion implantation

Efeito da incorporação de flúor nas propriedades de superfície de filmes DE aC:H

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