2021
DOI: 10.3390/chemosensors9080197
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Low-Dimensional Nanostructures Based on Cobalt Oxide (Co3O4) in Chemical-Gas Sensing

Abstract: Highly sensitive, stable, low production costs, together with easy maintenance and portability, sensors are ever most demanded nowadays for monitoring and quantification of hazardous chemicals/gases in the environment. The utilization of one dimensional (1D) metal oxide nano structured chemical/gas sensors for environmental monitoring is vastly investigated because of their superior surface to volume ratio, stability, and low production costs, to provide information on the presence of chemical species. Several… Show more

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Cited by 41 publications
(34 citation statements)
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“…Usually, in a p-type semiconductor, such as CuO, NiO, Co 3 O 4 , and Cr 2 O 3 , the acceptor level is near the valance band. Typically, the acceptor level is fully ionized (filled), leaving holes in the valance band at room temperature ( Figure 2 a) [ 15 ]. Once the metal-oxide surface is exposed to air, oxygen from the air gets adsorbed on the metal-oxide surface by trapping electrons from surface states.…”
Section: Mechanism Of P-type Mox Thin Filmsmentioning
confidence: 99%
See 2 more Smart Citations
“…Usually, in a p-type semiconductor, such as CuO, NiO, Co 3 O 4 , and Cr 2 O 3 , the acceptor level is near the valance band. Typically, the acceptor level is fully ionized (filled), leaving holes in the valance band at room temperature ( Figure 2 a) [ 15 ]. Once the metal-oxide surface is exposed to air, oxygen from the air gets adsorbed on the metal-oxide surface by trapping electrons from surface states.…”
Section: Mechanism Of P-type Mox Thin Filmsmentioning
confidence: 99%
“…Once the metal-oxide surface is exposed to air, oxygen from the air gets adsorbed on the metal-oxide surface by trapping electrons from surface states. The result is band bending and an increase in hole concentration near the interface, forming a hole-accumulating layer at the MOX surface ( Figure 2 b) [ 15 ]. This causes a decrease in the MOX resistance.…”
Section: Mechanism Of P-type Mox Thin Filmsmentioning
confidence: 99%
See 1 more Smart Citation
“…23 Co 3 O 4 is a p-type magnetic semiconductor with exact band gap energy (E g ) values calculated using the Tauc equation of 1.70-2.43 eV. 24 Cobalt oxides have a wide range of technological applications including in heterogeneous catalysis for the diminution of carbon monoxide, 25,26 carbon monoxide sensors, 27 anode materials for rechargeable lithium ion batteries, 28,29 and electrode materials for supercapacitors. [30][31][32] Recently, Akgul et al 33 utilized mechanical ball milling to afford cobalt oxide nanoparticles and analyzed its atomic structures and microstructural properties.…”
Section: Introductionmentioning
confidence: 99%
“…In recent years, metal oxides such as WO 3 [6], ZnO [7], SnO 2 [8], and Co 3 O 4 [9] have been a common type of material used in various sensors. Owing to its good catalytic performance and low cost, Co 3 O 4 is a potential material for this application, and it has been widely studied in many fields [10][11][12]. In addition, as a p-type semiconductor material, the gas-sensing capability of Co 3 O 4 is based on the catalytic properties of its surface, and it has been widely used as a catalyst to improve the selective oxidation of various volatile organic compounds (VOCs) [9,13].…”
Section: Introductionmentioning
confidence: 99%