Low driving voltage Mach-Zehnder interference modulator constructed from an electro-optic polymer on ultra-thin silicon with a broadband operation

Sato, Hiromu; Miura, Hideo; Qiu, Feng; Spring, Andrew M.; Kashino, Tsubasa; Kikuchi, Tsutomu; Ozawa, Masaaki; Nawata, Hideyuki; Odoi, Keisuke; Yokoyama, Shiyoshi

doi:10.1364/oe.25.000768

Cited by 56 publications

(21 citation statements)

References 25 publications

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“…The advantage of the intrinsic high EO coefficient of the polymer, together with the excellent confinement of light in the waveguide, enables a high EO efficiency, leading to a measured π-voltage–length product ( V π ⋅ L ) of 1.44 V⋅cm at a wavelength of 1.55 μm. In addition, in such a shallow silicon strip 39 – 41 , the fundamental optical mode near the sidewall occupies a small fraction of the total available optical power, thus leading to a propagation loss as low as 0.22 dB mm −1 (Supplementary Note 5 ).…”

Section: Resultsmentioning

confidence: 99%

“…The successful demonstration of the high-temperature-resistant SPH modulator operating at up to 200 Gbit s −1 relies on a combination of effective waveguide structures and highly efficient nonlinear organic EO materials. The presented modulator is fabricated on an ultra-thin silicon strip waveguide, featuring ease of fabrication and low propagation loss 39 , 40 . However, these features come at the cost of millimetre dimensions.…”

Section: Resultsmentioning

confidence: 99%

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High-temperature-resistant silicon-polymer hybrid modulator operating at up to 200 Gbit s−1 for energy-efficient datacentres and harsh-environment applications

et al. 2020

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To reduce the ever-increasing energy consumption in datacenters, one of the effective approaches is to increase the ambient temperature, thus lowering the energy consumed in the cooling systems. However, this entails more stringent requirements for the reliability and durability of the optoelectronic components. Herein, we fabricate and demonstrate silicon-polymer hybrid modulators which support ultra-fast single-lane data rates up to 200 gigabits per second, and meanwhile feature excellent reliability with an exceptional signal fidelity retained at extremely-high ambient temperatures up to 110 °C and even after long-term exposure to high temperatures. This is achieved by taking advantage of the high electro-optic (EO) activities (in-device n3r33 = 1021 pm V−1), low dielectric constant, low propagation loss (α, 0.22 dB mm−1), and ultra-high glass transition temperature (Tg, 172 °C) of the developed side-chain EO polymers. The presented modulator simultaneously fulfils the requirements of bandwidth, EO efficiency, and thermal stability for EO modulators. It could provide ultra-fast and reliable interconnects for energy-hungry and harsh-environment applications such as datacentres, 5G/B5G, autonomous driving, and aviation systems, effectively addressing the energy consumption issue for the next-generation optical communication.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

High-temperature-resistant silicon-polymer hybrid modulator operating at up to 200 Gbit s−1 for energy-efficient datacentres and harsh-environment applications

et al. 2020

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“…Consequently, we obtained an in‐device EO activity of the hybrid silicon and EO polymer ring modulator of r 33 = 129 pm/V (Supplementary Information). The obtained EO activity in this ring device is higher than that measured in the common waveguide modulator using a similar EO polymer …”

Section: Resultsmentioning

confidence: 52%

Electro‐optic Polymer Ring Resonator Modulator on a Flat Silicon‐on‐Insulator

Qiu

Spring

Hong

et al. 2017

Laser & Photonics Reviews

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Optical polymers are a promising material of choice in the development of hybrid silicon photonics devices. Particularly, recent progress in electro‐optic (EO) active polymers has shown a strong Pockels effect. A ring resonator modulator is a vital building block for practical applications, such as signal processing, routing, and monitoring. However, the properties of the hybrid silicon and EO polymer ring modulators are still far from their theoretical limits. Here, we demonstrate a unique design of a hybrid ring resonator modulator simply located onto a silicon‐on‐insulator (SOI) substrate. Extra doping and etching of the SOI wafer is not required, even so we measured an in‐device electro‐optic coefficient r33 = 129 pm/V. The ring modulator exhibited a high sensitivity of the electrically tunable resonance, which enabled a 3 dB bandwidth of up to 18 GHz. The proposed technique will enable efficient mass‐production of the micro‐footprint modulators and promote the development of integrated silicon photonics.

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“…The silicon guiding layer in the ultra-thin SOI waveguides is thinner than 100 nm. The ultra-thin SOI waveguides have been employed to implement variety of devices such as modulators [8][9][10], delay lines [11], ring resonators [12], mode converters [13], sensors [14], spiral Bragg gratings [15], grating couplers [16,17], multimode interference coupler [17], and Mach-Zehnder interferometers [17]. The propagating modes are confined in the guiding layer of a conventional SOI waveguide, consequently, these waveguides benefit from the high index-contrast between the core and claddings reducing the radiation loss in sharp bends.…”

Section: Introductionmentioning

confidence: 99%

Ultra-thin silicon-on-insulator waveguide bend based on truncated Eaton lens implemented by varying the guiding layer thickness

Badri

Gilarlue

Gavgani

2020

Photonics and Nanostructures - Fundamentals and Applications

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Silicon-on-insulator (SOI) waveguides with different geometries have been employed to design various integrated optical components. Reducing the bending radius of the SOI waveguides with low bending loss is essential in minimizing the footprint of light-wave circuits. The propagating mode is less confined in the core of the ultra-thin SOI waveguide and penetrates to substrate and cladding, leading to higher bending loss compared with conventional SOI waveguide with the thicker guiding layer. While various bending mechanisms have been utilized to reduce the bending loss of conventional SOI waveguides, the ultra-thin SOI waveguide bends have not been studied in detail. In this paper, we present a 60 nm-thick SOI waveguide bend based on the truncated Eaton lens implemented by varying thickness of the guiding layer. The three-dimensional full-wave simulations reveal that the designed waveguide bend, with a radius of 3.9 μm, reduces the bending loss from 3.3 to 0.42 dB at the wavelength of 1550 nm. Moreover, the bending loss for the wavelength range of 1260-1675 nm is lower than 0.67 dB while the bending loss in the C-band is lower than 0.45 dB.

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Low driving voltage Mach-Zehnder interference modulator constructed from an electro-optic polymer on ultra-thin silicon with a broadband operation

Cited by 56 publications

References 25 publications

High-temperature-resistant silicon-polymer hybrid modulator operating at up to 200 Gbit s−1 for energy-efficient datacentres and harsh-environment applications

High-temperature-resistant silicon-polymer hybrid modulator operating at up to 200 Gbit s−1 for energy-efficient datacentres and harsh-environment applications

Electro‐optic Polymer Ring Resonator Modulator on a Flat Silicon‐on‐Insulator

Ultra-thin silicon-on-insulator waveguide bend based on truncated Eaton lens implemented by varying the guiding layer thickness

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