Low-energy electron-microscopy investigations of orientational phase separation on vicinal Si(111) surfaces

Rj, Phaneuf; Bartelt, N. C.; Williams, E. D.; Świȩch, W.; Bauer, E.

doi:10.1103/physrevlett.67.2986

Cited by 103 publications

(58 citation statements)

References 10 publications

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“…There has been considerable interest recently in the structure and dynamics of vicinal surfaces [1][2][3][4][5][6]. From a fundamental point of view, the thermodynamics of these surfaces form a challenging subject, including surface roughening and melting, step and kink formation and facctting.…”

Section: Introductionmentioning

confidence: 99%

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Study of the step structure of vicinal Si(110) surfaces using optical second harmonic generation

Malliaras¹,

Wierenga²,

Rasing³

1993

Surface Science Letters

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Section: Introductionmentioning

confidence: 99%

“…Vicinal surfaces are also vety important for chemical reactivity (catalysis) and as substrates for epitaxial growth of crystals and nano-structures like quantum wires. A lot of experimental progress has been made using scanning tunneling microscopy [2,3], high resolution LEED [5] and transmission electron microscopy [6].…”

Section: Introductionmentioning

confidence: 99%

Study of the step structure of vicinal Si(110) surfaces using optical second harmonic generation

Malliaras¹,

Wierenga²,

Rasing³

1993

Surface Science Letters

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“…It should be noted, however, that this plane as a part of the triple step is under mechanical stress. 10 The surface under stress can exhibit completely different reconstruction compared to the fully relaxed case. 11 One example are strained Ge films 12 or islands 9,13 grown on Si͑111͒ surface, which show ͑7 ϫ 7͒ reconstruction, not observable on Ge͑111͒ samples.…”

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confidence: 98%

Comment on “Atomic structure model of the reconstructed Si(557) surface with a triple step structure: Adatom-parallel dimer model”

Жачук

Pereira

2009

Phys. Rev. B

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Recently, ͓Oh et al. Phys. Rev. B 77, 155430 ͑2008͔͒ reported on an atomic model for the so-called Si͑557͒-reconstructed surface with regular triple steps. The atomic structure model proposed was developed on the basis of high-resolution scanning tunneling microscopy ͑STM͒ images and first-principles calculations performed to match such STM images. Here we argue that the STM image presented is affected by an artifact, most likely related to a multiple tip image effect. Among other issues with the image presented, the corner holes for ͑7 ϫ 7͒ reconstruction on Si͑111͒ terraces are not visible, since a doubled image superimposed smears out such characteristic depression. The ͑ϫ7͒ periodicity deduced for the edge facets, in contrast with previously reported STM images and electron-diffraction studies which unambiguously indicate a ͑ϫ2͒ periodicity, arises from the same artifact. Finally, we remark that the ͑557͒ surface orientation and ͑112͒ orientation of triple steps assumed for first-principles calculations disregard the latest experimental data available, which suggests this surface has a ͑7 7 10͒ orientation and the steps in triple step do not form a well-defined plane ͓Surf. Sci. 600, 4878 ͑2006͔͒.

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“…Although at high temperatures the steps are distributed uniformly, upon cooling step bunching occurs [5]. At temperatures below the Si (1 x 1) (7 x 7) surface reconstruction transition the surface consists of reconstructed Si(111)-(7 x 7) terraces and step bunches [6,7]. Below 870°C the flat vicinal surface breaks up into a hill-and-valley structure [8].…”

Section: Introductionmentioning

confidence: 99%

Self-Assembled Parallel Mesoscopic Pb Wires on Vicinal Si(111)

Jałochowski

2000

Acta Phys. Pol. A

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The work presents a novel method of production of mesoscopic metallic wires on semiconducting surfaces. Making use the self-assembly phenomenon, arrays of extremely long and perfectly parallel mesoscopic Pb-wires on vicinal Si(111) substrates are formed and studied in UHV conditions. Before deposition of Pb a uniform distribution of monoatomic steps and terraces was induced by formation of Au chains running along step edges. The wires growing on the substrates held at temperatures close to the room temperature reach up to 8 µm length. A reflection high electron energy diffraction experiment shows that the wires laying on Si(533) along the step edges have triangular cross-section determined by (111) and (100) facets of Pb. Scanning tunneling microscopy images collected at low temperatures have enabled us to determine details of the wires shape and morphology of the substrate. The width of the wires was approximately equal to 60 nm whereas their height was about 10 nm. The observed strong growth anisotropy is attributed to step edge barriers and high Pb mobility on the smooth Si(111) narrow terraces that form vicinal surfaces and the anisotropic strain due to large misfit between Pb and Si lattices.

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Low-energy electron-microscopy investigations of orientational phase separation on vicinal Si(111) surfaces

Cited by 103 publications

References 10 publications

Study of the step structure of vicinal Si(110) surfaces using optical second harmonic generation

Study of the step structure of vicinal Si(110) surfaces using optical second harmonic generation

Comment on “Atomic structure model of the reconstructed Si(557) surface with a triple step structure: Adatom-parallel dimer model”

Self-Assembled Parallel Mesoscopic Pb Wires on Vicinal Si(111)

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