Low energy ion beam damage of semiconductor surfaces: a detailed study of InSb(100) using electron energy loss spectroscopy

Jones, T.S.; Ding, M.Q.; Richardson, N.V.; McConville, Christopher F

doi:10.1016/0039-6028(91)90189-y

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Comparison Of Contamination Removal -Ahc Vs Iba1

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1993

2022

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Cited by 34 publications

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“…However, it has been shown previously that IBA cleaning results in residual damage in the near-surface region, which can dramatically change the structure and electronic properties of the surface and sub-surface region [53][54][55][56].…”

Section: Comparison Of Contamination Removal -Ahc Vs Ibamentioning

confidence: 99%

Low temperature removal of surface oxides and hydrocarbons from Ge(100) using atomic hydrogen

Walker

Tedder

Palmer

et al. 2016

Applied Surface Science

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Section: Comparison Of Contamination Removal -Ahc Vs Ibamentioning

confidence: 99%

Low temperature removal of surface oxides and hydrocarbons from Ge(100) using atomic hydrogen

Walker

Tedder

Palmer

et al. 2016

Applied Surface Science

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“…Ion beam damage of InSb has been used for several different reasons. In [15]. Ar + with a low beam energy of 0.5 keV were used to prepare epi-ready surfaces.…”

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Variable range hopping conductivity in molecular beam epitaxial InSb

Holmes

Gough

Chen

et al. 2022

J. Phys. D: Appl. Phys.

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A Variable Range Hopping-VRH transport mechanism can be induced in molecular beam epitaxial, n-type doped InSb wafers with focussed Ga+ ion beam damage. This technique allows areas of wafer to be selectively damaged and then subsequently processed into gated MISmetal-insulator-semiconductor devices where a disordered, two-dimensional device can be established. At high levels of damage (dose > 1016 Ga+ ions/cm2) amorphous crystalline behaviour results with activated conductivity characteristic of a three-dimensional system with VRH below 150 K. At lower doses (1014 to 1016 Ga+ ions/cm2) a thermally activated conductivity is induced at ~ 0.9 K, characteristic of Mott phonon-assisted VRH. At 1 K the devices either conduct with conductivity > ~ (e2/h) where e is the fundamental charge and h is Planck’s constant, or are thermally activated depending on the dose level. The lightly damaged devices show weak antilocalization signals with conductivity characteristic of a two-dimensional electronic system. As the Ga+ dose increases, the measured phase coherence length reduces from ~ 500 nm to ~ 100 nm. This provides a region of VRH transport where phase-coherent transport processes can be studied in the hopping regime with the dimensionality controlled by a gate voltage in an MIS-device.

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