2016
DOI: 10.1007/978-3-319-33561-2_12
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Low Energy Ion Beam Modification of Nanostructures

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Cited by 4 publications
(4 citation statements)
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“…Medium-energy ions can be used for the synthesis and modification of thin films (elemental doping and micro-and nanostructure modification) at energies ranging from tens of keV to several MeV. 23,31 Swift Heavy Ion Irradiation. As the name suggests, there is a speed effect.…”
Section: Ion Beam Technologymentioning
confidence: 99%
See 1 more Smart Citation
“…Medium-energy ions can be used for the synthesis and modification of thin films (elemental doping and micro-and nanostructure modification) at energies ranging from tens of keV to several MeV. 23,31 Swift Heavy Ion Irradiation. As the name suggests, there is a speed effect.…”
Section: Ion Beam Technologymentioning
confidence: 99%
“…Ion beam technology started to develop rapidly since the 1960s when the ion implanters were developed for practical applications in semiconductor manufacturing. After decades of development, it has become a mature technical means for materials processing, modification, and analysis, and it is widely used in industrial production and scientific research. , The development history of ion beam technology demonstrates its importance and impact in the field of materials science and special nanoscience in recent years, contributing to advancements in electronics, energy, and other industries.…”
Section: Ion Beam Technologymentioning
confidence: 99%
“…In the past decades, nanostructures have been the subject of interest in science and technology thanks to the size-dependent properties being different from their bulk counterparts [1][2][3]. In addition to bottom-up or top-down approaches to synthesize nanoscale materials, ion irradiation has been established as a powerful technique to fabricate and tune their properties for a wide variety of applications [4][5][6][7][8][9]. Whereas the understanding of ion-solid interaction processes in bulk and thin film materials has been developed to an advanced stage [5,10,11], ion-induced processes, effects and reactions strongly differ when nanoscale materials are involved, and the associated understanding requires significant adjustments [7,[12][13][14].…”
Section: Introductionmentioning
confidence: 99%
“…Surface nanostructures are created during the irradiation of thin films by the ion beam, whereas NS implanted in the substrate are created via recoil implantation. 25,26 By adjusting the ion beam parameters (energy, fluence, and angle of incidence) and the thickness of thin films, recoil implantation can be used to create specific nanostructures. In any of these scenarios, it is always useful to be aware of the ion beam characteristics as well as the depth distribution of the recoiling atoms as a function of the layer thickness.…”
mentioning
confidence: 99%