2023
DOI: 10.1021/acs.cgd.3c00581
|View full text |Cite
|
Sign up to set email alerts
|

Low Energy Ion-Induced Crystallization of Ge in c-Al/a-Ge Bilayer Thin Films at Low Temperatures of ∼125 °C

Gurupada Maity,
Sunil Ojha,
Santosh Dubey
et al.

Abstract: The fabrication of polycrystalline Ge films at relatively low temperatures is of great importance for their applications in advanced microelectronic and solar cell devices. In this paper, we present the crystallization of Ge in a c-Al/a-Ge bilayer system at a temperature of 125 °C (lowest ever) using low energy ion beam irradiation followed by post-thermal annealing. The c-Al/a-Ge bilayer thin films are irradiated with 500 keV Kr + and Xe + ions at different fluences and then postannealed at a fixed temperatur… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
1
0

Year Published

2024
2024
2024
2024

Publication Types

Select...
3

Relationship

0
3

Authors

Journals

citations
Cited by 3 publications
(1 citation statement)
references
References 59 publications
0
1
0
Order By: Relevance
“…Similar to Si, the MILC of Ge has also been investigated using several metals, such as Ni, Co, , Pd, , Cu, , Sn, and Au . The temperature required for the MILC of Ge was lower than that for Si, which makes it promising for the realization of flexible electronics using plastic substrates. , However, the MILC region was composed of tiny crystal grains. ,, This is a challenge unique to polycrystalline Ge layers that is also common to other crystallization methods, such as solid-phase crystallization, laser annealing, chemical vapor deposition, , ion-induced crystallization, , and joule-heating induced crystallization. , …”
Section: Introductionmentioning
confidence: 99%
“…Similar to Si, the MILC of Ge has also been investigated using several metals, such as Ni, Co, , Pd, , Cu, , Sn, and Au . The temperature required for the MILC of Ge was lower than that for Si, which makes it promising for the realization of flexible electronics using plastic substrates. , However, the MILC region was composed of tiny crystal grains. ,, This is a challenge unique to polycrystalline Ge layers that is also common to other crystallization methods, such as solid-phase crystallization, laser annealing, chemical vapor deposition, , ion-induced crystallization, , and joule-heating induced crystallization. , …”
Section: Introductionmentioning
confidence: 99%