Low energy photoemission from (100) Ba1−xLaxSnO3 thin films for photocathode applications

Galdi, Alice; Pierce, Christopher M.; Cultrera, L.; Adhikari, Gowri; Schroeder, W. Andreas; Paik, Hanjong; Schlom, D. G.; Nangoi, J. Kevin; Arias, T. A.; Lochocki, Edward; Parzyck, Christopher; Shen, Kyle; Maxson, Jared; Bazarov, Ivan

doi:10.1140/epjst/e2019-800175-x

Cited by 3 publications

(2 citation statements)

References 14 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The strength of such dipole can be enhanced by alternating the exposure of the surface to an oxidizing agent like oxygen or NF 3 . This method has been successfully applied to activate to NEA the surface of a number of semiconductors belonging to the III-Vs [6], III-Nitrides [7] and more recently also to lower the work function of ordered oxide materials [8]. Due to the extreme sensitivity of the activating layer with respect to contamination, photocathodes based on effective NEA have a limited lifetime when operated as electron source for accelerators and require stringent vacuum conditions (vacuum levels better than 1x10 −11 Torr) so that their lifetime is sufficiently long to perform experiments.…”

Section: Introductionmentioning

confidence: 99%

Photoemission characterization of N-polar III-Nitride photocathodes as bright electron beam source for accelerator applications

Cultrera,

Rocco,

Shahedipour-Sandvik

et al. 2021

Preprint

Self Cite

View full text Add to dashboard Cite

We report on the growth and characterization of a new class of photocathode structures for application as electron sources to produce high brightness electron beams for accelerator applications. The sources are realized using III-Nitride materials and are designed to leverage the strong polarization field characteristic of this class material while grown in their wurtzite crystal structure to produce a negative electron affinity condition without the use of Cs, possibly allowing these materials to be operated in RF gun. A Quantum Efficiency (QE) of about 1x10 −3 and a Mean Transverse Energy (MTE) of electron of about 100 meV are measured at the operating wavelength of 265 nm. In a vacuum level of 3x10 −10 Torr the QE does not decrease after more than 24 hours of continuous operation. The lowest MTE, about 50 meV, is measured at 300 nm where the measured QE is 1.5x10 −5 . Surface characterizations reveal possible contribution to the MTE due to the surface morphology calling for more detailed studies.

show abstract

Section: Introductionmentioning

confidence: 99%

Photoemission characterization of N-polar III-Nitride photocathodes as bright electron beam source for accelerator applications

Cultrera,

Rocco,

Shahedipour-Sandvik

et al. 2021

Preprint

Self Cite

View full text Add to dashboard Cite

show abstract

“…This has been heavily studied on crystalline metals, but the goal now is to develop new materials (or artificial heterostructures) with small effective mass and a band structure specifically engineered towards minimizing the transverse momentum spread of the photoelectrons. Galdi et al [10] report the first evaluation of La-doped BaSnO 3 compound as a photocathode and discuss perspectives for future studies aimed at producing high brightness electron beams.…”

mentioning

confidence: 99%

Superconductivity and functional oxides

Citro

Noce

Pagano

et al. 2019

Eur. Phys. J. Spec. Top.

View full text Add to dashboard Cite

Photoemission characterization of N-polar III-nitride photocathodes as candidate bright electron beam sources for accelerator applications

Cultrera

Rocco

Bell

et al. 2022

Journal of Applied Physics

View full text Add to dashboard Cite

We report on the growth and characterization of a new class of photocathode structures for use as electron sources to produce high brightness electron beams for accelerator applications. The sources are realized using III-nitride materials and are designed to leverage the strong polarization field, which is characteristic of this class of materials when grown in their wurtzite crystal structure, to produce a negative electron affinity condition without the use of Cs, possibly allowing these materials to be operated in radio frequency guns. A Quantum Efficiency (QE) of about [Formula: see text] and an emitted electrons’ Mean Transverse Energy (MTE) of about 100 meV are measured at a wavelength of 265 nm. In a vacuum level of [Formula: see text] Torr, the QE does not decrease after more than 24 h of continuous operation. The lowest MTE of about 50 meV is measured at 300 nm along with a QE of [Formula: see text]. Surface characterizations reveal a possible contribution to the MTE from surface morphology, calling for more detailed studies.

show abstract

Low energy photoemission from (100) Ba1−xLaxSnO3 thin films for photocathode applications

Cited by 3 publications

References 14 publications

Photoemission characterization of N-polar III-Nitride photocathodes as bright electron beam source for accelerator applications

Photoemission characterization of N-polar III-Nitride photocathodes as bright electron beam source for accelerator applications

Superconductivity and functional oxides

Photoemission characterization of N-polar III-nitride photocathodes as candidate bright electron beam sources for accelerator applications

Contact Info

Product

Resources

About