Low Energy Proton Damage to Solar Cells

Weller, J. F.; Statler, R. L.

doi:10.1109/tns.1963.4323306

Cited by 3 publications

(3 citation statements)

References 5 publications

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“…The proton irradiation has been performed with the 3 MV TTT-3 tandem accelerator at the Physics Department of the Università Federico II in Napoli (Italy) [18] in the lower MeV range in vacuum and at the ISL of the Hahn-Meitner-Institut in Berlin (Germany) [19] at an proton energy of 65 MeV in air. In Fig.…”

Section: Proton Irradiationmentioning

confidence: 99%

“…The proton induced degradation of silicon solar cells [1] has been investigated since the beginning of silicon based solar cell technology because the electrical power supply of satellites was among the first commercial applications of these devices [2]. Today the degradation of crystalline silicon based devices is often related either to the equivalent degradation due to 1 MeV electrons or due to 10 MeV protons [3] or to the nonionizing energy loss (NIEL) [4].…”

Section: Introductionmentioning

confidence: 99%

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Electroluminescence efficiency degradation of crystalline silicon solar cells after irradiation with protons in the energy range between 0.8 MeV and 65 MeV

Neitzert¹,

Ferrara

Kunst

et al. 2008

Physica Status Solidi (b)

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Standard crystalline silicon homojunction solar cells have been irradiated with high energy protons at variable energies between 0.8 MeV and 65 MeV. As one possible criterion for the evaluation of the radiation induced degradation, we compared the supression of the bandgap electroluminescence at a wavelength around 1150 nm for the solar cells, irradiated at different energies. The lowest electroluminescene efficiency has been observed for an intermediate proton energy of 1.7 MeV. At this energy value however crystalline silicon solar cells are not homogeneously damaged as shown by the defect profiles, calculated by the SRIM code. We propose therefore a irradiation at a high energy in order to obtain a relative homogeneous defect profile. At 65 MeV the projected range of the protons in silicon is about 2 cm and we obtain a nearly constant defect distribution in the solar cell and the irradiation can be performed in air. Subsequently we compared the fluence dependence of the degradation of the solar cell parameters after 65 MeV irradiation with other material by the quantum yield spectra and the effective excess charge carrier lifetime, as measured on silicon wafers by the contactless TRMC-technique. Similar degradation has been found for the short circuit current, solar cell efficiency and electroluminescence efficiency and a good agreement between diffusion length and excess charge carrier lifetime changes

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Section: Proton Irradiationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Electroluminescence efficiency degradation of crystalline silicon solar cells after irradiation with protons in the energy range between 0.8 MeV and 65 MeV

Neitzert¹,

Ferrara

Kunst

et al. 2008

Physica Status Solidi (b)

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“…The proton irradiation has been performed at the ISL of the Hahn-Meitner-Institut in Berlin (Germany) [7] at a proton energy of 65 MeV in air from the side of the deposited films. The projected range of the protons at this energy is exceeding 1cm and, as revealed by SRIM (Stopping and Range of Ions in Matter) code simulation, one can assume a constant defect profile within all layers [8].…”

Section: Proton Irradiationmentioning

confidence: 99%

Degradation of micromorph silicon solar cells after exposure to 65 MeV protons

Neitzert

Labonia

Citro

et al. 2010

Phys. Status Solidi (c)

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Silicon micromorph tandem solar cells, grown on commercial. TCO coated substrates by plasma enhanced chemical vapour deposition, with an initial efficiency higher than 10%, have been degraded, in order to check their stability under space conditions, by irradiation with 65 MeV protons with fluences ranging from 10^12 protons/cm^2 up to 10^14 protons/cm^2. For low proton fluences we find a stronger decrease of the top amorphous cell photocurrent due to the stronger impact of the proton beam on the glass substrate transparency in the visible wavelength range, as compared to the infrared range. Only for very high fluences a stronger degradation of the photocurrent in the infrared wavelength range where the bottom microcrystalline cell is dominating the spectral response, has been observed. Because the non-irradiated cell has been found to be spectrally mismatched in favour of the top amorphous cell under AM1.5 and even more under AM0 irradiation conditions, for low and intermediate fluences the irradiation decreases the spectral mismatch of the micromorph tandem cells and results consequently in a relative stabilization of the irradiation induced degradation

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