Low energy Si+, SiCH5+, or C+ beam injections to silicon substrates during chemical vapor deposition with dimethylsilane

Yoshimura, Satoru; Sugimoto, Satoshi; Takeuchi, Takae; Murai, Kensuke; Kiuchi, Masato

doi:10.1016/j.heliyon.2023.e19002

Cited by 3 publications

(3 citation statements)

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“…Recent developments in the crystal growth of ultrathin X x Y 1−x C films on different substrates have given excellent opportunities to many researchers to prepare novel C-based semiconducting alloys with the expected crystal structures and compositions [42][43][44][45][46]. For future device designs and their applications using zb X x Y 1−x C alloys, we have reported our comprehensive calculations and predicted their x-dependent phonon ω j ( → q ), g(ω), and thermodynamic Θ D (T), C V (T) traits by using a RIM GF methodology in the VCA (see Table 4 and employing the results of binary XC materials).…”

Section: Phonon and Thermodynamic Properties Of X X Y 1−x C Ternary A...mentioning

confidence: 99%

“…At room temperature (RT), the C, Si, Ge, and α-Sn of diamond crystal structures are known to exhibit indirect band gap energies E g [≡5.47 eV, 1.12 eV, 0.66 eV and 0 eV]. Higher mismatch between the lattice constants, a o [≡C: 3.56 Å, Si: 5.43 Å, Ge: 5.66 Å, α-Sn: 6.49 Å] and low solubility of C has caused complications in the earlier designs of XC/Si MQWs and SLs [33][34][35][36][37][38][39][40][41][42][43][44][45]. However, the differences in their electronegativity now play a vital role in carefully optimizing parameters to achieve epitaxial growth of heterostructures apposite for diverse device applications.…”

Section: Introductionmentioning

confidence: 99%

“…One must note that by employing the pulsed supersonic free jets techniques [42][43][44][45], an inverse heteroepitaxial growth of Si on SiC has been demonstrated to achieve multilayer structures [46][47][48][49][50][51][52][53][54][55][56][57][58][59][60][61][62][63][64][65]. A novel arc plasma C gun source is incorporated in the molecular beam epitaxial (MBE) methods to grow ultrathin MQWs and SLs [66][67][68][69][70].…”

Section: Introductionmentioning

confidence: 99%

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Composition-Dependent Phonon and Thermodynamic Characteristics of C-Based XxY1−xC (X, Y ≡ Si, Ge, Sn) Alloys

Talwar

2024

Inorganics

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Novel zinc-blende (zb) group-IV binary XC and ternary XxY1−xC alloys (X, Y ≡ Si, Ge, and Sn) have recently gained scientific and technological interest as promising alternatives to silicon for high-temperature, high-power optoelectronics, gas sensing and photovoltaic applications. Despite numerous efforts made to simulate the structural, electronic, and dynamical properties of binary materials, no vibrational and/or thermodynamic studies exist for the ternary alloys. By adopting a realistic rigid-ion-model (RIM), we have reported methodical calculations to comprehend the lattice dynamics and thermodynamic traits of both binary and ternary compounds. With appropriate interatomic force constants (IFCs) of XC at ambient pressure, the study of phonon dispersions offered positive values of acoustic modes in the entire Brillouin zone (BZ)—implying their structural stability. For XxY1−xC, we have used Green’s function (GF) theory in the virtual crystal approximation to calculate composition x, dependent and one phonon density of states . With no additional IFCs, the RIM GF approach has provided complete in the crystallographic directions for both optical and acoustical phonon branches. In quasi-harmonic approximation, the theory predicted thermodynamic characteristics (e.g., Debye temperature ΘD(T) and specific heat Cv(T)) for XxY1−xC alloys. Unlike SiC, the GeC, SnC and GexSn1−xC materials have exhibited weak IFCs with low [high] values of ΘD(T) [Cv(T)]. We feel that the latter materials may not be suitable as fuel-cladding layers in nuclear reactors and high-temperature applications. However, the XC and XxY1−xC can still be used to design multi-quantum well or superlattice-based micro-/nano devices for different strategic and civilian application needs.

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Section: Phonon and Thermodynamic Properties Of X X Y 1−x C Ternary A...mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Composition-Dependent Phonon and Thermodynamic Characteristics of C-Based XxY1−xC (X, Y ≡ Si, Ge, Sn) Alloys

Talwar

2024

Inorganics

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Strain-Dependent Effects on Confinement of Folded Acoustic and Optical Phonons in Short-Period (XC)m/(YC)n with X,Y (≡Si, Ge, Sn) Superlattices

Talwar,

Semone,

Becla

2024

Materials

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Carbon-based novel low-dimensional XC/YC (with X, Y ≡ Si, Ge, and Sn) heterostructures have recently gained considerable scientific and technological interest in the design of electronic devices for energy transport use in extreme environments. Despite many efforts made to understand the structural, electronic, and vibrational properties of XC and XxY1−xC alloys, no measurements exist for identifying the phonon characteristics of superlattices (SLs) by employing either an infrared and/or Raman scattering spectroscopy. In this work, we report the results of a systematic study to investigate the lattice dynamics of the ideal / as well as graded SLs by meticulously including the interfacial layer thickness (≡1–3 monolayers). While the folded acoustic phonons (FAPs) are calculated using a Rytov model, the confined optical modes (COMs) and FAPs are described by adopting a modified linear-chain model. Although the simulations of low-energy dispersions for the FAPs indicated no significant changes by increasing , the results revealed, however, considerable “downward” shifts of high frequency COMs and “upward” shifts for the low energy optical modes. In the framework of a bond polarizability model, the calculated results of Raman scattering spectra for graded SLs are presented as a function of Special attention is paid to those modes in the middle of the frequency region, which offer strong contributions for enhancing the Raman intensity profiles. These simulated changes are linked to the localization of atomic displacements constrained either by the XC/YC or YC/XC unabrupt interfaces. We strongly feel that this study will encourage spectroscopists to perform Raman scattering measurements to check our theoretical conjectures.

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Impact of Acoustic and Optical Phonons on the Anisotropic Heat Conduction in Novel C-Based Superlattices

Talwar,

Becla

2024

Materials

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C-based XC binary materials and their (XC)m/(YC)n (X, Y ≡ Si, Ge and Sn) superlattices (SLs) have recently gained considerable interest as valuable alternatives to Si for designing and/or exploiting nanostructured electronic devices (NEDs) in the growing high-power application needs. In commercial NEDs, heat dissipation and thermal management have been and still are crucial issues. The concept of phonon engineering is important for manipulating thermal transport in low-dimensional heterostructures to study their lattice dynamical features. By adopting a realistic rigid-ion-model, we reported results of phonon dispersionsωjSLk→ of novel short−period XCm/(YC)n001 SLs, for m, n = 2, 3, 4 by varying phonon wavevectors k→SLalong the growth k|| ([001]), and in-plane k⊥ ([100], [010]) directions. The SL phonon dispersions displayed flattening of modes, especially at high-symmetry critical points Γ, Z and M. Miniband formation and anti-crossings in ωjSLk→ lead to the reduction in phonon conductivity κz along the growth direction by an order of magnitude relative to the bulk materials. Due to zone-folding effects, the in-plane phonons in SLs exhibited a strong mixture of XC-like and YC-like low-energy ωTA, ωLA modes with the emergence of stop bands at certain k→SL. For thermal transport applications, the results demonstrate modifications in thermal conductivities via changes in group velocities, specific heat, and density of states.

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Low energy Si+, SiCH5+, or C+ beam injections to silicon substrates during chemical vapor deposition with dimethylsilane

Cited by 3 publications

References 43 publications

Composition-Dependent Phonon and Thermodynamic Characteristics of C-Based XxY1−xC (X, Y ≡ Si, Ge, Sn) Alloys

Composition-Dependent Phonon and Thermodynamic Characteristics of C-Based XxY1−xC (X, Y ≡ Si, Ge, Sn) Alloys

Strain-Dependent Effects on Confinement of Folded Acoustic and Optical Phonons in Short-Period (XC)m/(YC)n with X,Y (≡Si, Ge, Sn) Superlattices

Impact of Acoustic and Optical Phonons on the Anisotropic Heat Conduction in Novel C-Based Superlattices

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